Highly chemical reactive ion etching of GaN and its influence on Schottky contacts

F. Karouta, B. Jacobs, I. Moerman, K. Jacobs, J.L. Weyher, S. Porowski, R. Crane, P.R. Hageman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	Materials Research Society fall Meeting, Symposium W, Paper # W11.76
Publication status	Published - 1999
Event	1999 MRS Fall Meeting & Exhibit - Boston, United States Duration: 29 Nov 1999 → 3 Dec 1999 https://www.mrs.org/fall1999

Cite this

@inproceedings{a4b6d0b041be41519638f1b5c38dd020,

title = "Highly chemical reactive ion etching of GaN and its influence on Schottky contacts",

author = "F. Karouta and B. Jacobs and I. Moerman and K. Jacobs and J.L. Weyher and S. Porowski and R. Crane and P.R. Hageman",

year = "1999",

language = "English",

booktitle = "Materials Research Society fall Meeting, Symposium W, Paper # W11.76",

note = "1999 MRS Fall Meeting & Exhibit ; Conference date: 29-11-1999 Through 03-12-1999",

url = "https://www.mrs.org/fall1999",

}

TY - GEN

T1 - Highly chemical reactive ion etching of GaN and its influence on Schottky contacts

AU - Karouta, F.

AU - Jacobs, B.

AU - Moerman, I.

AU - Jacobs, K.

AU - Weyher, J.L.

AU - Porowski, S.

AU - Crane, R.

AU - Hageman, P.R.

PY - 1999

Y1 - 1999

M3 - Conference contribution

BT - Materials Research Society fall Meeting, Symposium W, Paper # W11.76

T2 - 1999 MRS Fall Meeting & Exhibit

Y2 - 29 November 1999 through 3 December 1999

ER -