Highly chemical reactive ion etching of GaN and its influence on Schottky contacts

F. Karouta, B. Jacobs, I. Moerman, K. Jacobs, J.L. Weyher, S. Porowski, R. Crane, P.R. Hageman

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Original languageEnglish
Title of host publicationMaterials Research Society fall Meeting, Symposium W, Paper # W11.76
Publication statusPublished - 1999
EventGaN and Related Alloys, November 28-December 3, 1999, Boston, MA, USA - Boston, MA, United States
Duration: 29 Nov 19993 Dec 1999
http://www.mrs.org/f99-program-w/

Conference

ConferenceGaN and Related Alloys, November 28-December 3, 1999, Boston, MA, USA
CountryUnited States
CityBoston, MA
Period29/11/993/12/99
OtherSymposium held at the 1999 MRS Fall Meeting
Internet address

Cite this

Karouta, F., Jacobs, B., Moerman, I., Jacobs, K., Weyher, J. L., Porowski, S., Crane, R., & Hageman, P. R. (1999). Highly chemical reactive ion etching of GaN and its influence on Schottky contacts. In Materials Research Society fall Meeting, Symposium W, Paper # W11.76