Highly chemical reactive ion etching of GaN and its influence on Schottky contacts

F. Karouta, B. Jacobs, I. Moerman, K. Jacobs, J.L. Weyher, S. Porowski, R. Crane, P.R. Hageman

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Original languageEnglish
Title of host publicationMaterials Research Society fall Meeting, Symposium W, Paper # W11.76
Publication statusPublished - 1999
Event1999 MRS Fall Meeting & Exhibit - Boston, United States
Duration: 29 Nov 19993 Dec 1999


Conference1999 MRS Fall Meeting & Exhibit
Country/TerritoryUnited States
Internet address

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