High-Throughput Atomic Layer Deposition of P-Type SnO Thin Film Transistors Using Tin(II)bis(tert-amyloxide)

Alfredo Mameli; James D. Parish; Tamer Dogan; Gerwin Gelinck; Michael W. Snook; Andrew J. Straiton; Andrew L. Johnson; Auke J. Kronemeijer

doi:10.1002/admi.202101278

High-Throughput Atomic Layer Deposition of P-Type SnO Thin Film Transistors Using Tin(II)bis(tert-amyloxide)

Alfredo Mameli (Corresponding author), James D. Parish, Tamer Dogan, Gerwin Gelinck, Michael W. Snook, Andrew J. Straiton, Andrew L. Johnson (Corresponding author), Auke J. Kronemeijer

Molecular Materials and Nanosystems

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Spatial atomic layer deposition (sALD) of p-type SnO is demonstrated using a novel liquid ALD precursor, tin(II)-bis(tert-amyloxide), Sn(TAA)₂, and H₂O as the coreactant in a process which shows an increased deposition rate when compared to conventional temporal ALD. Compared to previously reported temporal ALD chemistries for the deposition of SnO, deposition rates of up to 19.5 times higher are obtained using Sn(TAA)₂ as a precursor in combination with atmospheric pressure sALD. Growths per cycle of 0.55 and 0.09 Å are measured at deposition temperatures of 100 and 210 °C, respectively. Common-gate thin film transistors (TFTs), fabricated using sALD with Sn(TAA)₂ result in linear mobilities of up to 0.4 cm² V^–1 s^–1 and on/off-current ratios, I_On/I_Off > 10². The combination of enhanced precursor chemistry and improved deposition hardware enables unprecedently high deposition rate ALD of p-type SnO, representing a significant step toward high-throughput p-type TFT fabrication on large area and flexible substrates.

Original language	English
Article number	2101278
Number of pages	8
Journal	Advanced Materials Interfaces
Volume	9
Issue number	9
DOIs	https://doi.org/10.1002/admi.202101278
Publication status	Published - 22 Mar 2022

Bibliographical note

Funding Information:
The authors are thankful to Ilias Katsouras for fruitful discussions. Leslye Ugalde and Thijs Bel are greatly acknowledged for their technical support. The authors would also like to thank Andrew Brookes, the Chemical Characterization and Analysis Facility, University of Bath, and Dr Andrew Britton of the Henry Royce Institute, University of Leeds, for their assistance and input on characterization. This work was partially financed by the King Abdullah University of Science and Technology (KAUST) Office for Sponsored Research (OSR) under Award OSR-CRG2018-3783. The authors also gratefully acknowledge the University of Bath for a departmental funded studentship (J.D.P.), and the University of Bath Department of Chemistry for their support of M.W.S.

Keywords

p-type transistors
precursor
spatial atomic layer deposition
tin monoxide (SnO)
tin(II) alkoxide

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title = "High-Throughput Atomic Layer Deposition of P-Type SnO Thin Film Transistors Using Tin(II)bis(tert-amyloxide)",

abstract = "Spatial atomic layer deposition (sALD) of p-type SnO is demonstrated using a novel liquid ALD precursor, tin(II)-bis(tert-amyloxide), Sn(TAA)2, and H2O as the coreactant in a process which shows an increased deposition rate when compared to conventional temporal ALD. Compared to previously reported temporal ALD chemistries for the deposition of SnO, deposition rates of up to 19.5 times higher are obtained using Sn(TAA)2 as a precursor in combination with atmospheric pressure sALD. Growths per cycle of 0.55 and 0.09 {\AA} are measured at deposition temperatures of 100 and 210 °C, respectively. Common-gate thin film transistors (TFTs), fabricated using sALD with Sn(TAA)2 result in linear mobilities of up to 0.4 cm2 V–1 s–1 and on/off-current ratios, IOn/IOff > 102. The combination of enhanced precursor chemistry and improved deposition hardware enables unprecedently high deposition rate ALD of p-type SnO, representing a significant step toward high-throughput p-type TFT fabrication on large area and flexible substrates.",

keywords = "p-type transistors, precursor, spatial atomic layer deposition, tin monoxide (SnO), tin(II) alkoxide",

author = "Alfredo Mameli and Parish, {James D.} and Tamer Dogan and Gerwin Gelinck and Snook, {Michael W.} and Straiton, {Andrew J.} and Johnson, {Andrew L.} and Kronemeijer, {Auke J.}",

note = "Funding Information: The authors are thankful to Ilias Katsouras for fruitful discussions. Leslye Ugalde and Thijs Bel are greatly acknowledged for their technical support. The authors would also like to thank Andrew Brookes, the Chemical Characterization and Analysis Facility, University of Bath, and Dr Andrew Britton of the Henry Royce Institute, University of Leeds, for their assistance and input on characterization. This work was partially financed by the King Abdullah University of Science and Technology (KAUST) Office for Sponsored Research (OSR) under Award OSR-CRG2018-3783. The authors also gratefully acknowledge the University of Bath for a departmental funded studentship (J.D.P.), and the University of Bath Department of Chemistry for their support of M.W.S.",

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AU - Gelinck, Gerwin

AU - Snook, Michael W.

AU - Straiton, Andrew J.

AU - Johnson, Andrew L.

AU - Kronemeijer, Auke J.

N1 - Funding Information: The authors are thankful to Ilias Katsouras for fruitful discussions. Leslye Ugalde and Thijs Bel are greatly acknowledged for their technical support. The authors would also like to thank Andrew Brookes, the Chemical Characterization and Analysis Facility, University of Bath, and Dr Andrew Britton of the Henry Royce Institute, University of Leeds, for their assistance and input on characterization. This work was partially financed by the King Abdullah University of Science and Technology (KAUST) Office for Sponsored Research (OSR) under Award OSR-CRG2018-3783. The authors also gratefully acknowledge the University of Bath for a departmental funded studentship (J.D.P.), and the University of Bath Department of Chemistry for their support of M.W.S.

PY - 2022/3/22

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N2 - Spatial atomic layer deposition (sALD) of p-type SnO is demonstrated using a novel liquid ALD precursor, tin(II)-bis(tert-amyloxide), Sn(TAA)2, and H2O as the coreactant in a process which shows an increased deposition rate when compared to conventional temporal ALD. Compared to previously reported temporal ALD chemistries for the deposition of SnO, deposition rates of up to 19.5 times higher are obtained using Sn(TAA)2 as a precursor in combination with atmospheric pressure sALD. Growths per cycle of 0.55 and 0.09 Å are measured at deposition temperatures of 100 and 210 °C, respectively. Common-gate thin film transistors (TFTs), fabricated using sALD with Sn(TAA)2 result in linear mobilities of up to 0.4 cm2 V–1 s–1 and on/off-current ratios, IOn/IOff > 102. The combination of enhanced precursor chemistry and improved deposition hardware enables unprecedently high deposition rate ALD of p-type SnO, representing a significant step toward high-throughput p-type TFT fabrication on large area and flexible substrates.

AB - Spatial atomic layer deposition (sALD) of p-type SnO is demonstrated using a novel liquid ALD precursor, tin(II)-bis(tert-amyloxide), Sn(TAA)2, and H2O as the coreactant in a process which shows an increased deposition rate when compared to conventional temporal ALD. Compared to previously reported temporal ALD chemistries for the deposition of SnO, deposition rates of up to 19.5 times higher are obtained using Sn(TAA)2 as a precursor in combination with atmospheric pressure sALD. Growths per cycle of 0.55 and 0.09 Å are measured at deposition temperatures of 100 and 210 °C, respectively. Common-gate thin film transistors (TFTs), fabricated using sALD with Sn(TAA)2 result in linear mobilities of up to 0.4 cm2 V–1 s–1 and on/off-current ratios, IOn/IOff > 102. The combination of enhanced precursor chemistry and improved deposition hardware enables unprecedently high deposition rate ALD of p-type SnO, representing a significant step toward high-throughput p-type TFT fabrication on large area and flexible substrates.

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ER -

High-Throughput Atomic Layer Deposition of P-Type SnO Thin Film Transistors Using Tin(II)bis(tert-amyloxide)

Abstract

Bibliographical note

Keywords

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