Abstract
This paper aims to review the consistency of existing GaN stiffness data and measure the high temperature elastic moduli of free-standing (0001) GaN. Dynamic mechanical thermal analysis (DMTA) and impact excitation were used to determine the E 33 elastic modulus at room temperature and at temperatures up to 550°C. At room temperature, E 33 ranged from 304 GPa to 279 GPa depending on the specific sample and measurement method. Using DMTA and a calibration with silicon, the elastic modulus decreased by 2.17% between 100°C and 500°C, in close agreement with the literature. By testing samples cut at a range of crystal orientations the isotropy of the stiffness in the (0001) plane was confirmed.
| Original language | English |
|---|---|
| Article number | 663309 |
| Pages (from-to) | 17-24 |
| Number of pages | 8 |
| Journal | Integrated Ferroelectrics |
| Volume | 133 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2012 |
| Event | International Symposium on Integrated Functionalities, ISIF 2011 - Cambridge, United Kingdom Duration: 31 Jul 2011 → 4 Aug 2011 |
Bibliographical note
Funding Information:The research leading to these results has received funding from the European Community’s Seventh Framework Programme FP7/2007-2011 under grant agreement n◦214610, project MORGaN. This publication reflects only the author’s views and that the Community is not liable for any use that may be made of the information contained therein.
Funding
The research leading to these results has received funding from the European Community’s Seventh Framework Programme FP7/2007-2011 under grant agreement n◦214610, project MORGaN. This publication reflects only the author’s views and that the Community is not liable for any use that may be made of the information contained therein.
Keywords
- Dynamic mechanical thermal analysis
- Elastic modulus
- Gallium nitride