High speed wavelength conversion in a heterogeneously integrated disc laser over silicon on insulator for network on a chip applications

O. Raz; L. Liu; D. Thourhout, Van; P. Rojo-Romeo; J.-M. Fédéli; H.J.S. Dorren

High speed wavelength conversion in a heterogeneously integrated disc laser over silicon on insulator for network on a chip applications

O. Raz, L. Liu, D. Thourhout, Van, P. Rojo-Romeo, J.-M. Fédéli, H.J.S. Dorren

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

10 Citations (Scopus)

28 Downloads (Pure)

Abstract

We present the first BER results for wavelength conversion at 2.5Gb/s for an InP membrane Micro-Disc-Laser bonded on SOI substrate. Measured BER supports error-free operation when FEC is used. Operation at 10GB/s is also demonstrated.

Original language	English
Title of host publication	Proceedings of the 35th European Conference on Optical Communication (ECOC 2009) 20 - 24 September 2009, Vienna
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	4.2.3-1/2
ISBN (Print)	978-1-4244-5096-1
Publication status	Published - 2009

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Raz, O., Liu, L., Thourhout, Van, D., Rojo-Romeo, P., Fédéli, J-M., & Dorren, H. J. S. (2009). High speed wavelength conversion in a heterogeneously integrated disc laser over silicon on insulator for network on a chip applications. In Proceedings of the 35th European Conference on Optical Communication (ECOC 2009) 20 - 24 September 2009, Vienna (pp. 4.2.3-1/2). Institute of Electrical and Electronics Engineers.

Raz, O. ; Liu, L. ; Thourhout, Van, D. et al. / High speed wavelength conversion in a heterogeneously integrated disc laser over silicon on insulator for network on a chip applications. Proceedings of the 35th European Conference on Optical Communication (ECOC 2009) 20 - 24 September 2009, Vienna. Piscataway : Institute of Electrical and Electronics Engineers, 2009. pp. 4.2.3-1/2

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title = "High speed wavelength conversion in a heterogeneously integrated disc laser over silicon on insulator for network on a chip applications",

abstract = "We present the first BER results for wavelength conversion at 2.5Gb/s for an InP membrane Micro-Disc-Laser bonded on SOI substrate. Measured BER supports error-free operation when FEC is used. Operation at 10GB/s is also demonstrated.",

author = "O. Raz and L. Liu and {Thourhout, Van}, D. and P. Rojo-Romeo and J.-M. F{\'e}d{\'e}li and H.J.S. Dorren",

year = "2009",

language = "English",

isbn = "978-1-4244-5096-1",

pages = "4.2.3--1/2",

booktitle = "Proceedings of the 35th European Conference on Optical Communication (ECOC 2009) 20 - 24 September 2009, Vienna",

publisher = "Institute of Electrical and Electronics Engineers",

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Raz, O, Liu, L, Thourhout, Van, D, Rojo-Romeo, P, Fédéli, J-M & Dorren, HJS 2009, High speed wavelength conversion in a heterogeneously integrated disc laser over silicon on insulator for network on a chip applications. in Proceedings of the 35th European Conference on Optical Communication (ECOC 2009) 20 - 24 September 2009, Vienna. Institute of Electrical and Electronics Engineers, Piscataway, pp. 4.2.3-1/2.

High speed wavelength conversion in a heterogeneously integrated disc laser over silicon on insulator for network on a chip applications. / Raz, O.; Liu, L.; Thourhout, Van, D. et al.

Proceedings of the 35th European Conference on Optical Communication (ECOC 2009) 20 - 24 September 2009, Vienna. Piscataway : Institute of Electrical and Electronics Engineers, 2009. p. 4.2.3-1/2.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - High speed wavelength conversion in a heterogeneously integrated disc laser over silicon on insulator for network on a chip applications

AU - Raz, O.

AU - Liu, L.

AU - Thourhout, Van, D.

AU - Rojo-Romeo, P.

AU - Fédéli, J.-M.

AU - Dorren, H.J.S.

PY - 2009

Y1 - 2009

N2 - We present the first BER results for wavelength conversion at 2.5Gb/s for an InP membrane Micro-Disc-Laser bonded on SOI substrate. Measured BER supports error-free operation when FEC is used. Operation at 10GB/s is also demonstrated.

AB - We present the first BER results for wavelength conversion at 2.5Gb/s for an InP membrane Micro-Disc-Laser bonded on SOI substrate. Measured BER supports error-free operation when FEC is used. Operation at 10GB/s is also demonstrated.

M3 - Conference contribution

SN - 978-1-4244-5096-1

SP - 4.2.3-1/2

BT - Proceedings of the 35th European Conference on Optical Communication (ECOC 2009) 20 - 24 September 2009, Vienna

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

ER -

Raz O, Liu L, Thourhout, Van D, Rojo-Romeo P, Fédéli J-M, Dorren HJS. High speed wavelength conversion in a heterogeneously integrated disc laser over silicon on insulator for network on a chip applications. In Proceedings of the 35th European Conference on Optical Communication (ECOC 2009) 20 - 24 September 2009, Vienna. Piscataway: Institute of Electrical and Electronics Engineers. 2009. p. 4.2.3-1/2

High speed wavelength conversion in a heterogeneously integrated disc laser over silicon on insulator for network on a chip applications

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