Abstract
Al2O3 thin films deposited at rates as high as 1.2 nm s-1 using spatially separated atomic layer deposition show excellent solar cell surface passivation properties, i.e., recombination velocities of
| Original language | English |
|---|---|
| Pages (from-to) | 3564-3567 |
| Journal | Advanced Materials |
| Volume | 22 |
| Issue number | 32 |
| DOIs | |
| Publication status | Published - 2010 |