High-speed spatial atomic-layer deposition of aluminium oxide layers for solar cell passivation

P. Poodt; A. Lankhorst; F. Roozeboom; K. Spee; D. Maas; Ad Vermeer

doi:10.1002/adma.201000766

High-speed spatial atomic-layer deposition of aluminium oxide layers for solar cell passivation

P. Poodt, A. Lankhorst, F. Roozeboom, K. Spee, D. Maas, Ad Vermeer

Plasma & Materials Processing

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Al2O3 thin films deposited at rates as high as 1.2 nm s-1 using spatially separated atomic layer deposition show excellent solar cell surface passivation properties, i.e., recombination velocities of

Original language	English
Pages (from-to)	3564-3567
Journal	Advanced Materials
Volume	22
Issue number	32
DOIs	https://doi.org/10.1002/adma.201000766
Publication status	Published - 2010

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title = "High-speed spatial atomic-layer deposition of aluminium oxide layers for solar cell passivation",

abstract = "Al2O3 thin films deposited at rates as high as 1.2 nm s-1 using spatially separated atomic layer deposition show excellent solar cell surface passivation properties, i.e., recombination velocities of",

author = "P. Poodt and A. Lankhorst and F. Roozeboom and K. Spee and D. Maas and Ad Vermeer",

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AU - Maas, D.

AU - Vermeer, Ad

PY - 2010

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N2 - Al2O3 thin films deposited at rates as high as 1.2 nm s-1 using spatially separated atomic layer deposition show excellent solar cell surface passivation properties, i.e., recombination velocities of

AB - Al2O3 thin films deposited at rates as high as 1.2 nm s-1 using spatially separated atomic layer deposition show excellent solar cell surface passivation properties, i.e., recombination velocities of

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VL - 22

SP - 3564

EP - 3567

JO - Advanced Materials

JF - Advanced Materials

IS - 32

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High-speed spatial atomic-layer deposition of aluminium oxide layers for solar cell passivation

Abstract

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