High-speed RF interconnects beyond 67 GHz in InP photonic integration technology

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Abstract

We developed an RF interconnect technology as a post-process for standard InP photonic integrated circuits and measured 50 GHz bandwidth on n-doped and >67 GHz on semi-insulating substrates with open eye diagrams at 56 Gb/s.

Original languageEnglish
Title of host publicationOECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Number of pages3
ISBN (Electronic)978-4-88552-321-2
DOIs
Publication statusPublished - 1 Jul 2019
Event24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing, OECC/PSC 2019 - Fukuoka, Japan
Duration: 7 Jul 201911 Jul 2019

Conference

Conference24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing, OECC/PSC 2019
CountryJapan
CityFukuoka
Period7/07/1911/07/19

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Keywords

  • Photonic integrated circuits
  • Photonics-Electronics integration

Cite this

Yao, W., Dolores-Calzadilla, V., de Vries, T., & Williams, K. (2019). High-speed RF interconnects beyond 67 GHz in InP photonic integration technology. In OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019 [8817728] Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.23919/PS.2019.8817728