High resolution x-ray diffraction and reflectivity studies of vertical and lateral ordering in multiple self-organized InGaAs quantum dots

A.A. Darhuber, V. Holy, J. Stangl, G. Bauer, A. Krost, F. Heinrichsdorff, M. Grundmann, D. Bimberg, V.M. Ustinov, P.S. Kop'Ev, A.O. Kosogov, P. Werner

    Research output: Contribution to journalArticleAcademicpeer-review

    4 Citations (Scopus)

    Abstract

    We have investigated multiple layers of self-assembled InGaAs quantum dots by high-resolution X-ray diffraction reciprocal space mapping and reflectivity. An anisotropy in the dot spacing was found, which proves an ordering of the islands in a disordered two-dimensional square lattice with main axes parallel to the direction and a lateral lattice parameter of 55 nm. Vertical correlations in the dot multilayers were investigated nondestructively in the regime of total external reflection of X-rays.
    Original languageEnglish
    Pages (from-to)4084-4087
    JournalJapanese Journal of Applied Physics, Part 1 : Regular Papers and Short Notes & Review Papers
    Volume36
    Issue number6B
    DOIs
    Publication statusPublished - 1997

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