High-resolution study of composite cavity effects for p-Ge lasers

E.W. Nelson, S.H. Withers, A.V. Muravjov, R.C. Strijbos, R.E. Peale, S.G. Pavlov, V.N. Shastin, C.J. Fredricksen

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The temporal dynamics, spectrum, and gain of the far-infrared p-Ge laser for composite cavities consisting of an active crystal and passive transparent elements have been studied with high temporal and spectral resolution. Results are relevant to improving the performance of mode-locked or tunable p-Ge lasers using intracavity modulators or wavelength selectors, respectively. It is shown that an interface between the active p-Ge crystal and a passive intracavity spacer causes partial frequency selection of the laser modes, characterized by a modulation of their relative intensities. Nevertheless, the longitudinal mode frequencies are determined by the entire optical length of the cavity and not by resonance frequencies of intracavity sub-components. Operation of the p-Ge laser with multiple interfaces between Ge, Si, and semi-insulating GaAs elements, or a gap, is demonstrated as a first step toward a p-Ge laser with an external quasioptical cavity and distributed active media
Original languageEnglish
Pages (from-to)1525-1530
Number of pages6
JournalIEEE Journal of Quantum Electronics
Issue number8
Publication statusPublished - 2001


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