High-rate plasma-deposited SiO2 films for surface passivation of crystalline silicon

B. Hoex; F.J.J. Peeters; M. Creatore; M.A. Blauw; W.M.M. Kessels; M.C.M. Sanden, van de

doi:10.1116/1.2232580

High-rate plasma-deposited SiO2 films for surface passivation of crystalline silicon

B. Hoex, F.J.J. Peeters, M. Creatore, M.A. Blauw, W.M.M. Kessels, M.C.M. Sanden, van de

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Abstract

SiO2 films were deposited by means of the expanding thermal plasma technique at rates in the range of 0.4-1.4 mm/min using an argon/oxygen/octamethylcyclotetrasiloxane (OMCTS) gas mixt. The film compn. was studied by means of various optical and nuclear profiling techniques. The films deposited with a low OMCTS to oxygen ratio showed no residual carbon and a low hydrogen content of .apprx.2% with a refractive index close to thermal oxide. For a higher OMCTS to oxygen ratio a carbon content of .apprx.4% was detected in the films and the refractive index increased to 1.67. The surface passivation of the SiO2 films was tested on high quality cryst. silicon. The films yielded an excellent level of surface passivation for plasma-deposited SiO2 films with an effective surface recombination velocity of 54 cm/s on 1.3 W cm n-type float zone cryst. silicon substrates after a 15 min forming gas anneal at 600 DegC. [on SciFinder (R)]

Original language	English
Pages (from-to)	1823-1830
Journal	Journal of Vacuum Science and Technology A
Volume	24
Issue number	5
DOIs	https://doi.org/10.1116/1.2232580
Publication status	Published - 2006

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title = "High-rate plasma-deposited SiO2 films for surface passivation of crystalline silicon",

abstract = "SiO2 films were deposited by means of the expanding thermal plasma technique at rates in the range of 0.4-1.4 mm/min using an argon/oxygen/octamethylcyclotetrasiloxane (OMCTS) gas mixt. The film compn. was studied by means of various optical and nuclear profiling techniques. The films deposited with a low OMCTS to oxygen ratio showed no residual carbon and a low hydrogen content of .apprx.2% with a refractive index close to thermal oxide. For a higher OMCTS to oxygen ratio a carbon content of .apprx.4% was detected in the films and the refractive index increased to 1.67. The surface passivation of the SiO2 films was tested on high quality cryst. silicon. The films yielded an excellent level of surface passivation for plasma-deposited SiO2 films with an effective surface recombination velocity of 54 cm/s on 1.3 W cm n-type float zone cryst. silicon substrates after a 15 min forming gas anneal at 600 DegC. [on SciFinder (R)]",

author = "B. Hoex and F.J.J. Peeters and M. Creatore and M.A. Blauw and W.M.M. Kessels and {Sanden, van de}, M.C.M.",

year = "2006",

doi = "10.1116/1.2232580",

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T1 - High-rate plasma-deposited SiO2 films for surface passivation of crystalline silicon

AU - Hoex, B.

AU - Peeters, F.J.J.

AU - Creatore, M.

AU - Blauw, M.A.

AU - Kessels, W.M.M.

AU - Sanden, van de, M.C.M.

PY - 2006

Y1 - 2006

N2 - SiO2 films were deposited by means of the expanding thermal plasma technique at rates in the range of 0.4-1.4 mm/min using an argon/oxygen/octamethylcyclotetrasiloxane (OMCTS) gas mixt. The film compn. was studied by means of various optical and nuclear profiling techniques. The films deposited with a low OMCTS to oxygen ratio showed no residual carbon and a low hydrogen content of .apprx.2% with a refractive index close to thermal oxide. For a higher OMCTS to oxygen ratio a carbon content of .apprx.4% was detected in the films and the refractive index increased to 1.67. The surface passivation of the SiO2 films was tested on high quality cryst. silicon. The films yielded an excellent level of surface passivation for plasma-deposited SiO2 films with an effective surface recombination velocity of 54 cm/s on 1.3 W cm n-type float zone cryst. silicon substrates after a 15 min forming gas anneal at 600 DegC. [on SciFinder (R)]

AB - SiO2 films were deposited by means of the expanding thermal plasma technique at rates in the range of 0.4-1.4 mm/min using an argon/oxygen/octamethylcyclotetrasiloxane (OMCTS) gas mixt. The film compn. was studied by means of various optical and nuclear profiling techniques. The films deposited with a low OMCTS to oxygen ratio showed no residual carbon and a low hydrogen content of .apprx.2% with a refractive index close to thermal oxide. For a higher OMCTS to oxygen ratio a carbon content of .apprx.4% was detected in the films and the refractive index increased to 1.67. The surface passivation of the SiO2 films was tested on high quality cryst. silicon. The films yielded an excellent level of surface passivation for plasma-deposited SiO2 films with an effective surface recombination velocity of 54 cm/s on 1.3 W cm n-type float zone cryst. silicon substrates after a 15 min forming gas anneal at 600 DegC. [on SciFinder (R)]

U2 - 10.1116/1.2232580

DO - 10.1116/1.2232580

M3 - Article

SN - 0734-2101

VL - 24

SP - 1823

EP - 1830

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

IS - 5

ER -

High-rate plasma-deposited SiO2 films for surface passivation of crystalline silicon

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