High-rate (> 1nm/s) and low-temperature (< 400 °C) deposition of silicon nitride using an N2/SiH4 and NH 3/SiH4 expanding thermal plasma

J. Hong; W. M.M. Kessels; M. C.M. van de Sanden

High-rate (> 1nm/s) and low-temperature (< 400 °C) deposition of silicon nitride using an N₂/SiH₄ and NH ₃/SiH₄ expanding thermal plasma

J. Hong, W. M.M. Kessels, M. C.M. van de Sanden

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

High-rate (> 1 nm/s) and low-temperature (50 - 400 °C) deposition of silicon nitride (a-SiN_x:H) films has been investigated by the expanding thermal plasma (ETP) technique using SiH₄ as Si-containing and N₂ or NH₃ as N-containing precursor gases. The structural, optical and electrical properties of the a-SiN_x:H films have been studied by elastic recoil detection, spectroscopic ellipsometry, infrared spectroscopy, dark conductivity measurements and atomic force microscopy. The film properties of the ETP deposited a-SiN_x:H films in this low-temperature range are discussed in terms of deposition rate, atomic composition, UV-VIS optical and IR vibrational properties, conductivity, and surface topography of the films.

Original language	English
Title of host publication	Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22-25, 2003, San Francisco, California, U.S.A.
Place of Publication	Warrendale
Publisher	Materials Research Society
Pages	169-174
Number of pages	6
ISBN (Print)	1-55899-699-0
Publication status	Published - 1 Dec 2003
Event	2003 Amorphous and Nanocrystalline Silicon-Based Films Symposium - San Francisco, United States Duration: 22 Apr 2003 → 25 Apr 2003

Publication series

Name	Materials Research Society Symposium - Proceedings
Volume	762
ISSN (Print)	0272-9172

Conference

Conference	2003 Amorphous and Nanocrystalline Silicon-Based Films Symposium
Country/Territory	United States
City	San Francisco
Period	22/04/03 → 25/04/03

Cite this

Hong, J., Kessels, W. M. M., & van de Sanden, M. C. M. (2003). High-rate (> 1nm/s) and low-temperature (< 400 °C) deposition of silicon nitride using an N₂/SiH₄ and NH ₃/SiH₄ expanding thermal plasma. In Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22-25, 2003, San Francisco, California, U.S.A. (pp. 169-174). (Materials Research Society Symposium - Proceedings; Vol. 762). Materials Research Society.

Hong, J. ; Kessels, W. M.M. ; van de Sanden, M. C.M. / High-rate (> 1nm/s) and low-temperature (< 400 °C) deposition of silicon nitride using an N₂/SiH₄ and NH ₃/SiH₄ expanding thermal plasma. Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22-25, 2003, San Francisco, California, U.S.A.. Warrendale : Materials Research Society, 2003. pp. 169-174 (Materials Research Society Symposium - Proceedings).

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title = "High-rate (> 1nm/s) and low-temperature (< 400 °C) deposition of silicon nitride using an N2/SiH4 and NH 3/SiH4 expanding thermal plasma",

abstract = "High-rate (> 1 nm/s) and low-temperature (50 - 400 °C) deposition of silicon nitride (a-SiNx:H) films has been investigated by the expanding thermal plasma (ETP) technique using SiH4 as Si-containing and N2 or NH3 as N-containing precursor gases. The structural, optical and electrical properties of the a-SiNx:H films have been studied by elastic recoil detection, spectroscopic ellipsometry, infrared spectroscopy, dark conductivity measurements and atomic force microscopy. The film properties of the ETP deposited a-SiNx:H films in this low-temperature range are discussed in terms of deposition rate, atomic composition, UV-VIS optical and IR vibrational properties, conductivity, and surface topography of the films.",

author = "J. Hong and Kessels, {W. M.M.} and {van de Sanden}, {M. C.M.}",

year = "2003",

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booktitle = "Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22-25, 2003, San Francisco, California, U.S.A.",

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note = "2003 Amorphous and Nanocrystalline Silicon-Based Films Symposium ; Conference date: 22-04-2003 Through 25-04-2003",

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Hong, J, Kessels, WMM & van de Sanden, MCM 2003, High-rate (> 1nm/s) and low-temperature (< 400 °C) deposition of silicon nitride using an N₂/SiH₄ and NH ₃/SiH₄ expanding thermal plasma. in Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22-25, 2003, San Francisco, California, U.S.A.. Materials Research Society Symposium - Proceedings, vol. 762, Materials Research Society, Warrendale, pp. 169-174, 2003 Amorphous and Nanocrystalline Silicon-Based Films Symposium, San Francisco, California, United States, 22/04/03.

High-rate (> 1nm/s) and low-temperature (< 400 °C) deposition of silicon nitride using an N₂/SiH₄ and NH ₃/SiH₄ expanding thermal plasma. / Hong, J.; Kessels, W. M.M.; van de Sanden, M. C.M.
Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22-25, 2003, San Francisco, California, U.S.A.. Warrendale: Materials Research Society, 2003. p. 169-174 (Materials Research Society Symposium - Proceedings; Vol. 762).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - High-rate (> 1nm/s) and low-temperature (< 400 °C) deposition of silicon nitride using an N2/SiH4 and NH 3/SiH4 expanding thermal plasma

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AU - van de Sanden, M. C.M.

PY - 2003/12/1

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N2 - High-rate (> 1 nm/s) and low-temperature (50 - 400 °C) deposition of silicon nitride (a-SiNx:H) films has been investigated by the expanding thermal plasma (ETP) technique using SiH4 as Si-containing and N2 or NH3 as N-containing precursor gases. The structural, optical and electrical properties of the a-SiNx:H films have been studied by elastic recoil detection, spectroscopic ellipsometry, infrared spectroscopy, dark conductivity measurements and atomic force microscopy. The film properties of the ETP deposited a-SiNx:H films in this low-temperature range are discussed in terms of deposition rate, atomic composition, UV-VIS optical and IR vibrational properties, conductivity, and surface topography of the films.

AB - High-rate (> 1 nm/s) and low-temperature (50 - 400 °C) deposition of silicon nitride (a-SiNx:H) films has been investigated by the expanding thermal plasma (ETP) technique using SiH4 as Si-containing and N2 or NH3 as N-containing precursor gases. The structural, optical and electrical properties of the a-SiNx:H films have been studied by elastic recoil detection, spectroscopic ellipsometry, infrared spectroscopy, dark conductivity measurements and atomic force microscopy. The film properties of the ETP deposited a-SiNx:H films in this low-temperature range are discussed in terms of deposition rate, atomic composition, UV-VIS optical and IR vibrational properties, conductivity, and surface topography of the films.

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BT - Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22-25, 2003, San Francisco, California, U.S.A.

PB - Materials Research Society

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Hong J, Kessels WMM , van de Sanden MCM. High-rate (> 1nm/s) and low-temperature (< 400 °C) deposition of silicon nitride using an N₂/SiH₄ and NH ₃/SiH₄ expanding thermal plasma. In Amorphous and nanocrystalline silicon-based films - 2003 : symposium held April 22-25, 2003, San Francisco, California, U.S.A.. Warrendale: Materials Research Society. 2003. p. 169-174. (Materials Research Society Symposium - Proceedings).

High-rate (> 1nm/s) and low-temperature (< 400 °C) deposition of silicon nitride using an N₂/SiH₄ and NH ₃/SiH₄ expanding thermal plasma

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