High-rate (> 1 nm/s) plasma deposited a-SiNx:H films for mc-Si solar cell application

J. Hong; W. M.M. Kessels; F. J.H. Van Assche; W. M.A. Bik; H. C. Rieffe; W. J. Soppe; A. W. Weeber; M. C.M. Van De Sanden

doi:10.1109/PVSC.2002.1190479

High-rate (> 1 nm/s) plasma deposited a-SiN_x:H films for mc-Si solar cell application

J. Hong, W. M.M. Kessels, F. J.H. Van Assche, W. M.A. Bik, H. C. Rieffe, W. J. Soppe, A. W. Weeber, M. C.M. Van De Sanden

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

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Abstract

We present hydrogenated amorphous silicon nitride (a-SiN_x:H) films for multicrystalline silicon (mc-Si) solar cells that are deposited at high rate (> 1nm/s) using an expanding thermal plasma. This remote plasma technique permits to deposit a-SiN_x:H with good ARC properties and which induces bulk passivation in mc-Si solar cells. The latter was observed by an enhanced red response of the cells' internal quantum efficiency. Here, we focus on the complete characterization of a-SiN_x:H films deposited under various conditions from N₂/SiH₄ and NH₃/SiH₄ mixtures. The film properties of a-SiN_x:H are found to be determined mainly by the N/Si ratio ranging from Si-rich to near-stoichiometric N-rich films. A study of hydrogen evolution after a thermal anneal by a firing-through process shows two distinctive regimes in terms of the N/Si ratio and the mass density of the a-SiN_x:H films.

Original language	English
Title of host publication	Conference Record of the IEEE Photovoltaic Specialists Conference, 29th, New Orleans, Louisiana, May 19-24, 2002
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	154-157
Number of pages	4
ISBN (Print)	0-7803-7471-1
DOIs	https://doi.org/10.1109/PVSC.2002.1190479
Publication status	Published - 1 Dec 2002
Event	29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: 19 May 2002 → 24 May 2002

Conference

Conference	29th IEEE Photovoltaic Specialists Conference
Country/Territory	United States
City	New Orleans, LA
Period	19/05/02 → 24/05/02

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10.1109/PVSC.2002.1190479

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Hong, J., Kessels, W. M. M., Van Assche, F. J. H., Bik, W. M. A., Rieffe, H. C., Soppe, W. J., Weeber, A. W., & Van De Sanden, M. C. M. (2002). High-rate (> 1 nm/s) plasma deposited a-SiN_x:H films for mc-Si solar cell application. In Conference Record of the IEEE Photovoltaic Specialists Conference, 29th, New Orleans, Louisiana, May 19-24, 2002 (pp. 154-157). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PVSC.2002.1190479

@inproceedings{c39c7413e4f54017a833ed784d72208d,

title = "High-rate (> 1 nm/s) plasma deposited a-SiNx:H films for mc-Si solar cell application",

abstract = "We present hydrogenated amorphous silicon nitride (a-SiNx:H) films for multicrystalline silicon (mc-Si) solar cells that are deposited at high rate (> 1nm/s) using an expanding thermal plasma. This remote plasma technique permits to deposit a-SiNx:H with good ARC properties and which induces bulk passivation in mc-Si solar cells. The latter was observed by an enhanced red response of the cells' internal quantum efficiency. Here, we focus on the complete characterization of a-SiNx:H films deposited under various conditions from N2/SiH4 and NH3/SiH4 mixtures. The film properties of a-SiNx:H are found to be determined mainly by the N/Si ratio ranging from Si-rich to near-stoichiometric N-rich films. A study of hydrogen evolution after a thermal anneal by a firing-through process shows two distinctive regimes in terms of the N/Si ratio and the mass density of the a-SiNx:H films.",

author = "J. Hong and Kessels, {W. M.M.} and {Van Assche}, {F. J.H.} and Bik, {W. M.A.} and Rieffe, {H. C.} and Soppe, {W. J.} and Weeber, {A. W.} and {Van De Sanden}, {M. C.M.}",

year = "2002",

month = dec,

day = "1",

doi = "10.1109/PVSC.2002.1190479",

language = "English",

isbn = "0-7803-7471-1",

pages = "154--157",

booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference, 29th, New Orleans, Louisiana, May 19-24, 2002",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "29th IEEE Photovoltaic Specialists Conference ; Conference date: 19-05-2002 Through 24-05-2002",

}

Hong, J, Kessels, WMM, Van Assche, FJH, Bik, WMA, Rieffe, HC, Soppe, WJ, Weeber, AW & Van De Sanden, MCM 2002, High-rate (> 1 nm/s) plasma deposited a-SiN_x:H films for mc-Si solar cell application. in Conference Record of the IEEE Photovoltaic Specialists Conference, 29th, New Orleans, Louisiana, May 19-24, 2002. Institute of Electrical and Electronics Engineers, Piscataway, pp. 154-157, 29th IEEE Photovoltaic Specialists Conference, New Orleans, LA, United States, 19/05/02. https://doi.org/10.1109/PVSC.2002.1190479

High-rate (> 1 nm/s) plasma deposited a-SiN_x:H films for mc-Si solar cell application. / Hong, J.; Kessels, W. M.M.; Van Assche, F. J.H. et al.
Conference Record of the IEEE Photovoltaic Specialists Conference, 29th, New Orleans, Louisiana, May 19-24, 2002. Piscataway: Institute of Electrical and Electronics Engineers, 2002. p. 154-157.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - High-rate (> 1 nm/s) plasma deposited a-SiNx:H films for mc-Si solar cell application

AU - Hong, J.

AU - Kessels, W. M.M.

AU - Van Assche, F. J.H.

AU - Bik, W. M.A.

AU - Rieffe, H. C.

AU - Soppe, W. J.

AU - Weeber, A. W.

AU - Van De Sanden, M. C.M.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - We present hydrogenated amorphous silicon nitride (a-SiNx:H) films for multicrystalline silicon (mc-Si) solar cells that are deposited at high rate (> 1nm/s) using an expanding thermal plasma. This remote plasma technique permits to deposit a-SiNx:H with good ARC properties and which induces bulk passivation in mc-Si solar cells. The latter was observed by an enhanced red response of the cells' internal quantum efficiency. Here, we focus on the complete characterization of a-SiNx:H films deposited under various conditions from N2/SiH4 and NH3/SiH4 mixtures. The film properties of a-SiNx:H are found to be determined mainly by the N/Si ratio ranging from Si-rich to near-stoichiometric N-rich films. A study of hydrogen evolution after a thermal anneal by a firing-through process shows two distinctive regimes in terms of the N/Si ratio and the mass density of the a-SiNx:H films.

AB - We present hydrogenated amorphous silicon nitride (a-SiNx:H) films for multicrystalline silicon (mc-Si) solar cells that are deposited at high rate (> 1nm/s) using an expanding thermal plasma. This remote plasma technique permits to deposit a-SiNx:H with good ARC properties and which induces bulk passivation in mc-Si solar cells. The latter was observed by an enhanced red response of the cells' internal quantum efficiency. Here, we focus on the complete characterization of a-SiNx:H films deposited under various conditions from N2/SiH4 and NH3/SiH4 mixtures. The film properties of a-SiNx:H are found to be determined mainly by the N/Si ratio ranging from Si-rich to near-stoichiometric N-rich films. A study of hydrogen evolution after a thermal anneal by a firing-through process shows two distinctive regimes in terms of the N/Si ratio and the mass density of the a-SiNx:H films.

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U2 - 10.1109/PVSC.2002.1190479

DO - 10.1109/PVSC.2002.1190479

M3 - Conference contribution

SN - 0-7803-7471-1

SP - 154

EP - 157

BT - Conference Record of the IEEE Photovoltaic Specialists Conference, 29th, New Orleans, Louisiana, May 19-24, 2002

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 29th IEEE Photovoltaic Specialists Conference

Y2 - 19 May 2002 through 24 May 2002

ER -

Hong J, Kessels WMM, Van Assche FJH, Bik WMA, Rieffe HC, Soppe WJ et al. High-rate (> 1 nm/s) plasma deposited a-SiN_x:H films for mc-Si solar cell application. In Conference Record of the IEEE Photovoltaic Specialists Conference, 29th, New Orleans, Louisiana, May 19-24, 2002. Piscataway: Institute of Electrical and Electronics Engineers. 2002. p. 154-157 doi: 10.1109/PVSC.2002.1190479

High-rate (> 1 nm/s) plasma deposited a-SiN_x:H films for mc-Si solar cell application

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