TY - JOUR
T1 - High-rate deposition of nanocrystalline silicon using the expanding thermal plasma technique
AU - Kessels, W.M.M.
AU - Houston, I.J.
AU - Nadir, K.
AU - Sanden, van de, M.C.M.
PY - 2006
Y1 - 2006
N2 - Nanocryst. silicon films have been deposited at very high deposition rates using the expanding thermal plasma technique and their structural properties have been analyzed. The crystallinity and crystallite size and orientation have been detd. for various hydrogen-to-silane diln. ratios and it is shown that films with a cryst. fraction of 60-80% can be deposited at deposition rates within the range 1.5-3.0 nm/s. The hydrogen concn. and at. densities in the film have been investigated by IR spectroscopy and elastic recoil detection/Rutherford backscattering revealing underestimation of the hydrogen content by IR spectroscopy as well as a reduced at. film d. for the nanocryst. silicon films. [on SciFinder (R)]
AB - Nanocryst. silicon films have been deposited at very high deposition rates using the expanding thermal plasma technique and their structural properties have been analyzed. The crystallinity and crystallite size and orientation have been detd. for various hydrogen-to-silane diln. ratios and it is shown that films with a cryst. fraction of 60-80% can be deposited at deposition rates within the range 1.5-3.0 nm/s. The hydrogen concn. and at. densities in the film have been investigated by IR spectroscopy and elastic recoil detection/Rutherford backscattering revealing underestimation of the hydrogen content by IR spectroscopy as well as a reduced at. film d. for the nanocryst. silicon films. [on SciFinder (R)]
U2 - 10.1016/j.jnoncrysol.2006.01.044
DO - 10.1016/j.jnoncrysol.2006.01.044
M3 - Article
SN - 0022-3093
VL - 352
SP - 915
EP - 918
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
IS - 9-20
ER -