High rate deposition of amorphous hydrogenated silicon using an expanding thermal plasma

R.J. Severens, W.M.M. Kessels, L. Gabella, F. van de Pas, M.C.M. Sanden, van de, D.C. Schram

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Original languageEnglish
Title of host publicationProceedings of the 13th International Symposium on Plasma Chemistry III, Beijing, China, 18-22 augustus, 1997
EditorsC.K. Wu
Place of PublicationBeijing, China
PublisherPeking University Press
Pages1059-1064
ISBN (Print)7-301-03483-0
Publication statusPublished - 1997
Event13th International Symposium on Plasma Chemistry (ISPC 13), August 18-22, 1997, Beijing, China - Beijing, China
Duration: 18 Aug 199722 Aug 1997

Conference

Conference13th International Symposium on Plasma Chemistry (ISPC 13), August 18-22, 1997, Beijing, China
Abbreviated titleISPC 13
Country/TerritoryChina
CityBeijing
Period18/08/9722/08/97

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