High rate deposition of a-Si:H by an expanding argon-hydrogen-silane plasma : plasma chemistry and film growth

W.M.M. Kessels; C.M. Leewis; R.J. Severens; M.C.M. Sanden, van de; D.C. Schram

High rate deposition of a-Si:H by an expanding argon-hydrogen-silane plasma : plasma chemistry and film growth

W.M.M. Kessels, C.M. Leewis, R.J. Severens, M.C.M. Sanden, van de, D.C. Schram

Plasma & Materials Processing

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

Original language	English
Title of host publication	IVC : 14th International Vacuum Congress, Birmingham, UK, 31 August - 4 September, 1998 : abstract book
Editors	R.B. Jackman
Place of Publication	Oxford
Publisher	Pergamon
Pages	387-
Publication status	Published - 1999
Event	conference; International Vacuum Congress (IVC) ; 14 (Birmingham) : 1998.08.31-09.04; 1998-08-31; 1998-09-04 - Duration: 31 Aug 1998 → 4 Sept 1998

Conference

Conference	conference; International Vacuum Congress (IVC) ; 14 (Birmingham) : 1998.08.31-09.04; 1998-08-31; 1998-09-04
Period	31/08/98 → 4/09/98
Other	International Vacuum Congress (IVC) ; 14 (Birmingham) : 1998.08.31-09.04

Cite this

@inproceedings{281367ef5b9440c7b652768d96a259a0,

title = "High rate deposition of a-Si:H by an expanding argon-hydrogen-silane plasma : plasma chemistry and film growth",

author = "W.M.M. Kessels and C.M. Leewis and R.J. Severens and {Sanden, van de}, M.C.M. and D.C. Schram",

year = "1999",

language = "English",

pages = "387--",

editor = "R.B. Jackman",

booktitle = "IVC : 14th International Vacuum Congress, Birmingham, UK, 31 August - 4 September, 1998 : abstract book",

publisher = "Pergamon",

note = "conference; International Vacuum Congress (IVC) ; 14 (Birmingham) : 1998.08.31-09.04; 1998-08-31; 1998-09-04 ; Conference date: 31-08-1998 Through 04-09-1998",

}

Kessels, WMM, Leewis, CM, Severens, RJ, Sanden, van de, MCM & Schram, DC 1999, High rate deposition of a-Si:H by an expanding argon-hydrogen-silane plasma : plasma chemistry and film growth. in RB Jackman (ed.), IVC : 14th International Vacuum Congress, Birmingham, UK, 31 August - 4 September, 1998 : abstract book. Pergamon, Oxford, pp. 387-, conference; International Vacuum Congress (IVC) ; 14 (Birmingham) : 1998.08.31-09.04; 1998-08-31; 1998-09-04, 31/08/98.

High rate deposition of a-Si:H by an expanding argon-hydrogen-silane plasma : plasma chemistry and film growth. / Kessels, W.M.M.; Leewis, C.M.; Severens, R.J. et al.
IVC : 14th International Vacuum Congress, Birmingham, UK, 31 August - 4 September, 1998 : abstract book. ed. / R.B. Jackman. Oxford: Pergamon, 1999. p. 387-.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - High rate deposition of a-Si:H by an expanding argon-hydrogen-silane plasma : plasma chemistry and film growth

AU - Kessels, W.M.M.

AU - Leewis, C.M.

AU - Severens, R.J.

AU - Sanden, van de, M.C.M.

AU - Schram, D.C.

PY - 1999

Y1 - 1999

M3 - Conference contribution

SP - 387-

BT - IVC : 14th International Vacuum Congress, Birmingham, UK, 31 August - 4 September, 1998 : abstract book

A2 - Jackman, R.B.

PB - Pergamon

CY - Oxford

T2 - conference; International Vacuum Congress (IVC) ; 14 (Birmingham) : 1998.08.31-09.04; 1998-08-31; 1998-09-04

Y2 - 31 August 1998 through 4 September 1998

ER -