High rate deposition of a-Si:H by an expanding argon-hydrogen-silane plasma : plasma chemistry and film growth

W.M.M. Kessels, C.M. Leewis, R.J. Severens, M.C.M. Sanden, van de, D.C. Schram

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Original languageEnglish
Title of host publicationIVC : 14th International Vacuum Congress, Birmingham, UK, 31 August - 4 September, 1998 : abstract book
EditorsR.B. Jackman
Place of PublicationOxford
PublisherPergamon
Pages387-
Publication statusPublished - 1999
Eventconference; International Vacuum Congress (IVC) ; 14 (Birmingham) : 1998.08.31-09.04; 1998-08-31; 1998-09-04 -
Duration: 31 Aug 19984 Sep 1998

Conference

Conferenceconference; International Vacuum Congress (IVC) ; 14 (Birmingham) : 1998.08.31-09.04; 1998-08-31; 1998-09-04
Period31/08/984/09/98
OtherInternational Vacuum Congress (IVC) ; 14 (Birmingham) : 1998.08.31-09.04

Cite this

Kessels, W. M. M., Leewis, C. M., Severens, R. J., Sanden, van de, M. C. M., & Schram, D. C. (1999). High rate deposition of a-Si:H by an expanding argon-hydrogen-silane plasma : plasma chemistry and film growth. In R. B. Jackman (Ed.), IVC : 14th International Vacuum Congress, Birmingham, UK, 31 August - 4 September, 1998 : abstract book (pp. 387-). Pergamon.