High-rate anisotropic silicon etching with the expanding thermal plasma technique

M.A. Blauw, P.J.W. van Lankvelt, F. Roozeboom, W.M.M. Kessels, M.C.M. Sanden, van de

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

Deep anisotropic silicon etching with the expanding thermal plasma (ETP) technique using fluorine-based chemistries was demonstrated for the first time. The ETP technique has a remote high-density plasma source and a good control of the downstream plasma chemistry. High etch rates between 4 and 12 µm per min were obtained while feature profiles were competitive to those obtained with the widely used inductively coupled plasma (ICP) reactors. Therefore, this novel deep anisotropic silicon etching process is an attractive, alternative fabrication technology for micromechanical devices, trench capacitors, and 3D-interconnects.
Original languageEnglish
Title of host publication210th ECS Meeting October 29-November 3, 2006 , Cancun, Mexico
EditorsG. Hunter, S. Akbar
PublisherECS
Pages291-298
DOIs
Publication statusPublished - 2006
Event210th Electrochemical Society Meeting (ECS 2006): 2006 Joint Internatio0nal Meeting - Cancún, Mexico
Duration: 29 Oct 20063 Nov 2006
https://www.electrochem.org/210

Publication series

NameECS Transactions
Volume3
ISSN (Print)1938-6737

Conference

Conference210th Electrochemical Society Meeting (ECS 2006)
CountryMexico
CityCancún
Period29/10/063/11/06
OtherThe 210th Electrochemical Society Meeting, 2006, Cancun, Mexico
Internet address

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