High-rate anisotropic silicon etching with the expanding thermal plasma technique

M.A. Blauw, P.J.W. van Lankvelt, F. Roozeboom, M.C.M. Sanden, van de, W.M.M. Kessels

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Abstract

Deep anisotropic silicon etching with the expanding thermal plasma (ETP) technique using fluorine-based chemistries was demonstrated. The ETP technique makes use of a remote high-d. plasma source and it has a good control of the downstream plasma chem. Both a cryogenic etching process and a time-multiplexed etching process were developed. Etch rates up to 12 micro m min-1 and selectivities higher than 300 were obtained while feature profiles were comparable to those obtained with the widely used inductively coupled plasma reactors. Therefore, this deep anisotropic silicon etching technique is an attractive alternative for the fabrication of microstructures with high-aspect-ratio features. [on SciFinder (R)]
Original languageEnglish
Pages (from-to)H309-H312
JournalElectrochemical and Solid-State Letters
Volume10
Issue number10
DOIs
Publication statusPublished - 2007

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