High rate a-Si:H growth studied by in situ ellipsometry

A.H.M. Smets, B.A. Korevaar, W.M.M. Kessels, M.C.M. Sanden, van de, D.C. Schram

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Original languageEnglish
Title of host publicationPresentation at the AVS, American Vacuum Society : 46th international symposium, Seattle, October 25-29, 1999 : virtual proceedings
PagesTF-MoM6-
Publication statusPublished - 1999
Event46th International Symposium American Vacuum Society - Seattle, United States
Duration: 25 Oct 199929 Oct 1999

Conference

Conference46th International Symposium American Vacuum Society
Abbreviated titleAVS 46
CountryUnited States
CitySeattle
Period25/10/9929/10/99

Cite this

Smets, A. H. M., Korevaar, B. A., Kessels, W. M. M., Sanden, van de, M. C. M., & Schram, D. C. (1999). High rate a-Si:H growth studied by in situ ellipsometry. In Presentation at the AVS, American Vacuum Society : 46th international symposium, Seattle, October 25-29, 1999 : virtual proceedings (pp. TF-MoM6-)