High-rate a-Si:H and μc-Si:H film growth studied by advanced plasma and in-situ diagnostics

W.M.M. Kessels; P.J. van den Oever; J.P.M. Hoefnagels; J. Hong; I.J. Houston; M.C.M. Sanden, van de

doi:10.1557/PROC-715-A25.6

High-rate a-Si:H and μc-Si:H film growth studied by advanced plasma and in-situ diagnostics

W.M.M. Kessels, P.J. van den Oever , J.P.M. Hoefnagels, J. Hong, I.J. Houston, M.C.M. Sanden, van de

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Plasma and in situ film studies have been applied to the expanding thermal plasma toobtain basic insight into the deposition of a-Si:H and µc-Si:H at high rates (> 10 Å/s). A study of the density of plasma radicals (Si, SiH, SiH3) and of the radicals’ surface reactivity has revealed that SiH3 is the most important radical for the growth of both materials. In situ attenuated total reflection infrared spectroscopy and spectroscopic ellipsometry have revealed a thick interface layer and consequently long incubation time for the materials deposited at a high deposition rate.

Original language	English
Title of host publication	Amorphous and heterogeneous silicon-based films, 2002 : symposium held [at the 2002 MRS spring meeting] April 2 - 5, 2002, San Francisco, California, U.S.A
Editors	J.D. Cohen
Pages	43-48
DOIs	https://doi.org/10.1557/PROC-715-A25.6
Publication status	Published - 2002
Event	2002 MRS Spring Meeting & Exhibit - San Francisco, United States Duration: 1 Apr 2002 → 5 Apr 2002 https://www.mrs.org/spring2002 http://www.mrs.org/s02-program-q/ http://www.mrs.org/s02-program-v/

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	715
ISSN (Print)	0272-9172

Conference

Conference	2002 MRS Spring Meeting & Exhibit
Country/Territory	United States
City	San Francisco
Period	1/04/02 → 5/04/02
Other	Symposium held at the 2002 MRS Spring Meeting
Internet address	https://www.mrs.org/spring2002 http://www.mrs.org/s02-program-q/ http://www.mrs.org/s02-program-v/

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10.1557/PROC-715-A25.6

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Kessels, W. M. M., van den Oever , P. J., Hoefnagels, J. P. M., Hong, J., Houston, I. J., & Sanden, van de, M. C. M. (2002). High-rate a-Si:H and μc-Si:H film growth studied by advanced plasma and in-situ diagnostics. In J. D. Cohen (Ed.), Amorphous and heterogeneous silicon-based films, 2002 : symposium held [at the 2002 MRS spring meeting] April 2 - 5, 2002, San Francisco, California, U.S.A (pp. 43-48). Article A25.6 (Materials Research Society Symposium Proceedings; Vol. 715). https://doi.org/10.1557/PROC-715-A25.6

Kessels, W.M.M. ; van den Oever , P.J. ; Hoefnagels, J.P.M. et al. / High-rate a-Si:H and μc-Si:H film growth studied by advanced plasma and in-situ diagnostics. Amorphous and heterogeneous silicon-based films, 2002 : symposium held [at the 2002 MRS spring meeting] April 2 - 5, 2002, San Francisco, California, U.S.A. editor / J.D. Cohen. 2002. pp. 43-48 (Materials Research Society Symposium Proceedings).

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title = "High-rate a-Si:H and μc-Si:H film growth studied by advanced plasma and in-situ diagnostics",

abstract = "Plasma and in situ film studies have been applied to the expanding thermal plasma toobtain basic insight into the deposition of a-Si:H and µc-Si:H at high rates (> 10 {\AA}/s). A study of the density of plasma radicals (Si, SiH, SiH3) and of the radicals{\textquoteright} surface reactivity has revealed that SiH3 is the most important radical for the growth of both materials. In situ attenuated total reflection infrared spectroscopy and spectroscopic ellipsometry have revealed a thick interface layer and consequently long incubation time for the materials deposited at a high deposition rate.",

author = "W.M.M. Kessels and \{van den Oever\}, P.J. and J.P.M. Hoefnagels and J. Hong and I.J. Houston and \{Sanden, van de\}, M.C.M.",

year = "2002",

doi = "10.1557/PROC-715-A25.6",

language = "English",

isbn = "1-558-99651-6",

series = "Materials Research Society Symposium Proceedings",

pages = "43--48",

editor = "J.D. Cohen",

booktitle = "Amorphous and heterogeneous silicon-based films, 2002 : symposium held [at the 2002 MRS spring meeting] April 2 - 5, 2002, San Francisco, California, U.S.A",

note = "2002 MRS Spring Meeting \& Exhibit ; Conference date: 01-04-2002 Through 05-04-2002",

url = "https://www.mrs.org/spring2002, http://www.mrs.org/s02-program-q/, http://www.mrs.org/s02-program-v/",

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Kessels, WMM, van den Oever , PJ, Hoefnagels, JPM, Hong, J, Houston, IJ & Sanden, van de, MCM 2002, High-rate a-Si:H and μc-Si:H film growth studied by advanced plasma and in-situ diagnostics. in JD Cohen (ed.), Amorphous and heterogeneous silicon-based films, 2002 : symposium held [at the 2002 MRS spring meeting] April 2 - 5, 2002, San Francisco, California, U.S.A., A25.6, Materials Research Society Symposium Proceedings, vol. 715, pp. 43-48, 2002 MRS Spring Meeting & Exhibit, San Francisco, California, United States, 1/04/02. https://doi.org/10.1557/PROC-715-A25.6

High-rate a-Si:H and μc-Si:H film growth studied by advanced plasma and in-situ diagnostics. / Kessels, W.M.M.; van den Oever , P.J.; Hoefnagels, J.P.M. et al.
Amorphous and heterogeneous silicon-based films, 2002 : symposium held [at the 2002 MRS spring meeting] April 2 - 5, 2002, San Francisco, California, U.S.A. ed. / J.D. Cohen. 2002. p. 43-48 A25.6 (Materials Research Society Symposium Proceedings; Vol. 715).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Kessels, W.M.M.

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AU - Hong, J.

AU - Houston, I.J.

AU - Sanden, van de, M.C.M.

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N2 - Plasma and in situ film studies have been applied to the expanding thermal plasma toobtain basic insight into the deposition of a-Si:H and µc-Si:H at high rates (> 10 Å/s). A study of the density of plasma radicals (Si, SiH, SiH3) and of the radicals’ surface reactivity has revealed that SiH3 is the most important radical for the growth of both materials. In situ attenuated total reflection infrared spectroscopy and spectroscopic ellipsometry have revealed a thick interface layer and consequently long incubation time for the materials deposited at a high deposition rate.

AB - Plasma and in situ film studies have been applied to the expanding thermal plasma toobtain basic insight into the deposition of a-Si:H and µc-Si:H at high rates (> 10 Å/s). A study of the density of plasma radicals (Si, SiH, SiH3) and of the radicals’ surface reactivity has revealed that SiH3 is the most important radical for the growth of both materials. In situ attenuated total reflection infrared spectroscopy and spectroscopic ellipsometry have revealed a thick interface layer and consequently long incubation time for the materials deposited at a high deposition rate.

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DO - 10.1557/PROC-715-A25.6

M3 - Conference contribution

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BT - Amorphous and heterogeneous silicon-based films, 2002 : symposium held [at the 2002 MRS spring meeting] April 2 - 5, 2002, San Francisco, California, U.S.A

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Kessels WMM, van den Oever PJ, Hoefnagels JPM, Hong J, Houston IJ, Sanden, van de MCM. High-rate a-Si:H and μc-Si:H film growth studied by advanced plasma and in-situ diagnostics. In Cohen JD, editor, Amorphous and heterogeneous silicon-based films, 2002 : symposium held [at the 2002 MRS spring meeting] April 2 - 5, 2002, San Francisco, California, U.S.A. 2002. p. 43-48. A25.6. (Materials Research Society Symposium Proceedings). doi: 10.1557/PROC-715-A25.6

High-rate a-Si:H and μc-Si:H film growth studied by advanced plasma and in-situ diagnostics

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