High-quality surface passivation obtained by high-rate deposited silicon nitride, silicon dioxide and amorphous silicon using the versatile expanding thermal plasma technique

B. Hoex; F.J.J. Peeters; A.J.M. van Erven; M.D. Bijker; W.M.M. Kessels; M.C.M. Sanden, van de

doi:10.1109/WCPEC.2006.279296

High-quality surface passivation obtained by high-rate deposited silicon nitride, silicon dioxide and amorphous silicon using the versatile expanding thermal plasma technique

B. Hoex, F.J.J. Peeters, A.J.M. van Erven, M.D. Bijker, W.M.M. Kessels, M.C.M. Sanden, van de

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

87 Downloads (Pure)

Abstract

The expanding thermal plasma (ETP) is a novel plasma technique currently used by several solar cell manufacturers for the deposition of silicon nitride antireflection coatings on (multi-) crystalline silicon solar cells. In this paper we will show that the ETP technique is versatile and can be used for the deposition of silicon nitride, silicon dioxide and hydrogenated amorphous silicon with a good level of surface passivation. In this way the ETP technique can meet the future PV demands with respect to the decrease in wafer thickness and the use of n-type material that requires good electrical and optical quality thin films at both the front and the back side of the solar cell

Original language	English
Title of host publication	Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. 7-12 May 2006, Waikoloa, HI, USA
Place of Publication	Piscataway, NJ, USA
Publisher	Institute of Electrical and Electronics Engineers
Pages	1036-1039
ISBN (Print)	1-424-40016-3
DOIs	https://doi.org/10.1109/WCPEC.2006.279296
Publication status	Published - 2006

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Hoex, B., Peeters, F. J. J., van Erven, A. J. M., Bijker, M. D., Kessels, W. M. M., & Sanden, van de, M. C. M. (2006). High-quality surface passivation obtained by high-rate deposited silicon nitride, silicon dioxide and amorphous silicon using the versatile expanding thermal plasma technique. In Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. 7-12 May 2006, Waikoloa, HI, USA (pp. 1036-1039). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/WCPEC.2006.279296

Hoex, B. ; Peeters, F.J.J. ; van Erven, A.J.M. et al. / High-quality surface passivation obtained by high-rate deposited silicon nitride, silicon dioxide and amorphous silicon using the versatile expanding thermal plasma technique. Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. 7-12 May 2006, Waikoloa, HI, USA. Piscataway, NJ, USA : Institute of Electrical and Electronics Engineers, 2006. pp. 1036-1039

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title = "High-quality surface passivation obtained by high-rate deposited silicon nitride, silicon dioxide and amorphous silicon using the versatile expanding thermal plasma technique",

abstract = "The expanding thermal plasma (ETP) is a novel plasma technique currently used by several solar cell manufacturers for the deposition of silicon nitride antireflection coatings on (multi-) crystalline silicon solar cells. In this paper we will show that the ETP technique is versatile and can be used for the deposition of silicon nitride, silicon dioxide and hydrogenated amorphous silicon with a good level of surface passivation. In this way the ETP technique can meet the future PV demands with respect to the decrease in wafer thickness and the use of n-type material that requires good electrical and optical quality thin films at both the front and the back side of the solar cell",

author = "B. Hoex and F.J.J. Peeters and {van Erven}, A.J.M. and M.D. Bijker and W.M.M. Kessels and {Sanden, van de}, M.C.M.",

year = "2006",

doi = "10.1109/WCPEC.2006.279296",

language = "English",

isbn = "1-424-40016-3",

pages = "1036--1039",

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publisher = "Institute of Electrical and Electronics Engineers",

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Hoex, B, Peeters, FJJ, van Erven, AJM, Bijker, MD, Kessels, WMM & Sanden, van de, MCM 2006, High-quality surface passivation obtained by high-rate deposited silicon nitride, silicon dioxide and amorphous silicon using the versatile expanding thermal plasma technique. in Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. 7-12 May 2006, Waikoloa, HI, USA. Institute of Electrical and Electronics Engineers, Piscataway, NJ, USA, pp. 1036-1039. https://doi.org/10.1109/WCPEC.2006.279296

High-quality surface passivation obtained by high-rate deposited silicon nitride, silicon dioxide and amorphous silicon using the versatile expanding thermal plasma technique. / Hoex, B.; Peeters, F.J.J.; van Erven, A.J.M. et al.
Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. 7-12 May 2006, Waikoloa, HI, USA. Piscataway, NJ, USA: Institute of Electrical and Electronics Engineers, 2006. p. 1036-1039.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AB - The expanding thermal plasma (ETP) is a novel plasma technique currently used by several solar cell manufacturers for the deposition of silicon nitride antireflection coatings on (multi-) crystalline silicon solar cells. In this paper we will show that the ETP technique is versatile and can be used for the deposition of silicon nitride, silicon dioxide and hydrogenated amorphous silicon with a good level of surface passivation. In this way the ETP technique can meet the future PV demands with respect to the decrease in wafer thickness and the use of n-type material that requires good electrical and optical quality thin films at both the front and the back side of the solar cell

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Hoex B, Peeters FJJ, van Erven AJM, Bijker MD, Kessels WMM , Sanden, van de MCM. High-quality surface passivation obtained by high-rate deposited silicon nitride, silicon dioxide and amorphous silicon using the versatile expanding thermal plasma technique. In Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. 7-12 May 2006, Waikoloa, HI, USA. Piscataway, NJ, USA: Institute of Electrical and Electronics Engineers. 2006. p. 1036-1039 doi: 10.1109/WCPEC.2006.279296

High-quality surface passivation obtained by high-rate deposited silicon nitride, silicon dioxide and amorphous silicon using the versatile expanding thermal plasma technique

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