High quality GaN layers on Si(111) substrates: AlN buffer layer optimisation and insertion of a SiN intermediate layer

P.R. Hageman, S. Haffouz, V. Kirilyuk, A. Grzegorczyk, P.K. Larsen

Research output: Contribution to journalArticleAcademicpeer-review

65 Citations (Scopus)

Abstract

We present a study on the material properties of GaN films grown on (111) silicon substrates by low-pressure metalorganic chemical vapour deposition using AlN buffer layers. This buffer layer is optimised with respect to growth temperature and time for the optical and structural properties of the GaN epilayers. The insertion of a SixNy intermediate layer significantly increases the optical and structural properties. It results in a reduction of the D0X FWHM to 10 meV and in a 2.5-fold increase of its luminescence intensity. The FWHM of symmetric and asymmetric -scans are reduced from 832 to 669 arcsec and from 702 to 547 arcsec, respectively.
Original languageEnglish
Pages (from-to)523-526
Number of pages4
JournalPhysica Status Solidi A : Applied Research
Volume188
Issue number2
DOIs
Publication statusPublished - 2001
Externally publishedYes

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