High quality a-Si:H grown at high rate using an expanding thermal plasma

R.J. Severens, J. Bastiaanssen, M.C.M. Sanden, van de, D.C. Schram

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

42 Downloads (Pure)
Original languageEnglish
Title of host publicationPSE : Plasma surface engineering : 5th international conference, Garmisch-Partenkrichen, September 9-13, 1996, abstracts
Pages131
Publication statusPublished - 1996

Cite this

Severens, R. J., Bastiaanssen, J., Sanden, van de, M. C. M., & Schram, D. C. (1996). High quality a-Si:H grown at high rate using an expanding thermal plasma. In PSE : Plasma surface engineering : 5th international conference, Garmisch-Partenkrichen, September 9-13, 1996, abstracts (pp. 131)
Severens, R.J. ; Bastiaanssen, J. ; Sanden, van de, M.C.M. ; Schram, D.C. / High quality a-Si:H grown at high rate using an expanding thermal plasma. PSE : Plasma surface engineering : 5th international conference, Garmisch-Partenkrichen, September 9-13, 1996, abstracts. 1996. pp. 131
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Severens, RJ, Bastiaanssen, J, Sanden, van de, MCM & Schram, DC 1996, High quality a-Si:H grown at high rate using an expanding thermal plasma. in PSE : Plasma surface engineering : 5th international conference, Garmisch-Partenkrichen, September 9-13, 1996, abstracts. pp. 131.

High quality a-Si:H grown at high rate using an expanding thermal plasma. / Severens, R.J.; Bastiaanssen, J.; Sanden, van de, M.C.M.; Schram, D.C.

PSE : Plasma surface engineering : 5th international conference, Garmisch-Partenkrichen, September 9-13, 1996, abstracts. 1996. p. 131.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

TY - GEN

T1 - High quality a-Si:H grown at high rate using an expanding thermal plasma

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AU - Bastiaanssen, J.

AU - Sanden, van de, M.C.M.

AU - Schram, D.C.

PY - 1996

Y1 - 1996

M3 - Conference contribution

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BT - PSE : Plasma surface engineering : 5th international conference, Garmisch-Partenkrichen, September 9-13, 1996, abstracts

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Severens RJ, Bastiaanssen J, Sanden, van de MCM, Schram DC. High quality a-Si:H grown at high rate using an expanding thermal plasma. In PSE : Plasma surface engineering : 5th international conference, Garmisch-Partenkrichen, September 9-13, 1996, abstracts. 1996. p. 131