@inproceedings{e251b5f1e505441283c5b4c9ad49ff38,
title = "High-Q integrated RF passives and RF-MEMS on silicon",
abstract = "A technology platform is described for the integration of low-loss inductors, capacitors, and MEMS capacitors on a high-resistivity Si substrate. Using this platform the board space area, taken up by e.g. a DCS PA output impedance matching circuit can be reduced by 50%. The losses of passive components that are induced by the semi-conducting Si substrate can effectively be suppressed using a combination of surface amorphisation and the use of poly crystalline Si substrates. A MEM switchable capacitor with a capacitance switching factor of 40 and an actuation voltage of 5V is demonstrated. A continuous tuneable dual-gap capacitor is demonstrated with a tuning ratio of 9 using actuation voltages below 15V.",
author = "{van Beek}, {Joost T.M.} and {van Delden}, {Marc H.W.M.} and {van Dijken}, Auke and {van Eerd}, Patrick and Jansman, {Andre B.M.} and Kemmeren, {Anton L.A.M.} and Rijks, {Theo G.S.M.} and Steeneken, {Peter G.} and {den Toonder}, Jaap and Ulenaers, {Mathieu J.E.} and {Den Dekker}, Arnold and Pieter Lok and Nick Pulsford and {van Straten}, Freek and {van Teeffelen}, Lenhard and {de Coster}, Jeroen and Robert Puers",
year = "2003",
month = dec,
day = "1",
doi = "10.1557/PROC-783-B3.1",
language = "English",
series = "Materials Research Society Symposium - Proceedings",
publisher = "Materials Research Society",
pages = "97--108",
booktitle = "Materials, Integration and Packaging Issues for High - Frequency Devices; Boston, MA; United States",
address = "United States",
note = "Materials, Integration and Packaging Issues for High - Frequency Devices ; Conference date: 01-12-2003 Through 03-12-2003",
}