High-Q integrated RF passives and micro-mechanical capacitors on silicon

J.T.M. van Beek, M.H.W.M. van Delden, A. van Dijken, P. van Eerd, M. van Grootel, A.B.M. Jansman, A.L.A.M. Kemmeren, Th.G.S.M. Rijks, P.G. Steeneken, J. den Toonder, M. Ulenaers, A. den Dekker, P. Lok, N. Pulsford, F. van Straten, L. van Teeffelen, J. de Coster, R. Puers

Research output: Contribution to conferencePaperAcademic

21 Citations (Scopus)

Abstract

The PASSI™ technology platform is described for the integration of low-loss inductors, capacitors, and MEMS on high-ohmic Si substrates. Using this platform the board space area taken up by e.g. impedance matching circuits can be reduced by 50%. The losses of passives induced by the semi-conducting Si substrate can effectively be suppressed using a combination of surface amorphisation and e-beam irradiation. The incorporation of MEM tuneable capacitors in high-Q inductor-capacitor networks is demonstrated.

Original languageEnglish
Pages147-150
Number of pages4
Publication statusPublished - 1 Dec 2003
Event2003 BIPOLAR/BICMOS Circuits and Technology Meeting - Toulouse, France
Duration: 28 Sep 200330 Sep 2003

Conference

Conference2003 BIPOLAR/BICMOS Circuits and Technology Meeting
Country/TerritoryFrance
CityToulouse
Period28/09/0330/09/03

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