The PASSI™ technology platform is described for the integration of low-loss inductors, capacitors, and MEMS on high-ohmic Si substrates. Using this platform the board space area taken up by e.g. impedance matching circuits can be reduced by 50%. The losses of passives induced by the semi-conducting Si substrate can effectively be suppressed using a combination of surface amorphisation and e-beam irradiation. The incorporation of MEM tuneable capacitors in high-Q inductor-capacitor networks is demonstrated.
|Number of pages||4|
|Publication status||Published - 1 Dec 2003|
|Event||2003 BIPOLAR/BICMOS Circuits and Technology Meeting - Toulouse, France|
Duration: 28 Sept 2003 → 30 Sept 2003
|Conference||2003 BIPOLAR/BICMOS Circuits and Technology Meeting|
|Period||28/09/03 → 30/09/03|