High-Q integrated RF passives and micro-mechanical capacitors on silicon

J.T.M. van Beek; M.H.W.M. van Delden; A. van Dijken; P. van Eerd; M. van Grootel; A.B.M. Jansman; A.L.A.M. Kemmeren; Th.G.S.M. Rijks; P.G. Steeneken; J. den Toonder; M. Ulenaers; A. den Dekker; P. Lok; N. Pulsford; F. van Straten; L. van Teeffelen; J. de Coster; R. Puers

High-Q integrated RF passives and micro-mechanical capacitors on silicon

J.T.M. van Beek, M.H.W.M. van Delden, A. van Dijken, P. van Eerd, M. van Grootel, A.B.M. Jansman, A.L.A.M. Kemmeren, Th.G.S.M. Rijks, P.G. Steeneken, J. den Toonder, M. Ulenaers, A. den Dekker, P. Lok, N. Pulsford, F. van Straten, L. van Teeffelen, J. de Coster, R. Puers

Research output: Contribution to conference › Paper › Academic

22 Citations (Scopus)

Abstract

The PASSI™ technology platform is described for the integration of low-loss inductors, capacitors, and MEMS on high-ohmic Si substrates. Using this platform the board space area taken up by e.g. impedance matching circuits can be reduced by 50%. The losses of passives induced by the semi-conducting Si substrate can effectively be suppressed using a combination of surface amorphisation and e-beam irradiation. The incorporation of MEM tuneable capacitors in high-Q inductor-capacitor networks is demonstrated.

Original language	English
Pages	147-150
Number of pages	4
Publication status	Published - 1 Dec 2003
Event	2003 BIPOLAR/BICMOS Circuits and Technology Meeting - Toulouse, France Duration: 28 Sept 2003 → 30 Sept 2003

Conference

Conference	2003 BIPOLAR/BICMOS Circuits and Technology Meeting
Country/Territory	France
City	Toulouse
Period	28/09/03 → 30/09/03

Cite this

van Beek, J. T. M., van Delden, M. H. W. M., van Dijken, A., van Eerd, P., van Grootel, M., Jansman, A. B. M., Kemmeren, A. L. A. M., Rijks, T. G. S. M., Steeneken, P. G., den Toonder, J., Ulenaers, M., den Dekker, A., Lok, P., Pulsford, N., van Straten, F., van Teeffelen, L., de Coster, J., & Puers, R. (2003). High-Q integrated RF passives and micro-mechanical capacitors on silicon. 147-150. Paper presented at 2003 BIPOLAR/BICMOS Circuits and Technology Meeting, Toulouse, France.

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abstract = "The PASSI{\texttrademark} technology platform is described for the integration of low-loss inductors, capacitors, and MEMS on high-ohmic Si substrates. Using this platform the board space area taken up by e.g. impedance matching circuits can be reduced by 50%. The losses of passives induced by the semi-conducting Si substrate can effectively be suppressed using a combination of surface amorphisation and e-beam irradiation. The incorporation of MEM tuneable capacitors in high-Q inductor-capacitor networks is demonstrated.",

author = "{van Beek}, J.T.M. and {van Delden}, M.H.W.M. and {van Dijken}, A. and {van Eerd}, P. and {van Grootel}, M. and A.B.M. Jansman and A.L.A.M. Kemmeren and Th.G.S.M. Rijks and P.G. Steeneken and {den Toonder}, J. and M. Ulenaers and {den Dekker}, A. and P. Lok and N. Pulsford and {van Straten}, F. and {van Teeffelen}, L. and {de Coster}, J. and R. Puers",

year = "2003",

month = dec,

day = "1",

language = "English",

pages = "147--150",

note = "2003 BIPOLAR/BICMOS Circuits and Technology Meeting ; Conference date: 28-09-2003 Through 30-09-2003",

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van Beek, JTM, van Delden, MHWM, van Dijken, A, van Eerd, P, van Grootel, M, Jansman, ABM, Kemmeren, ALAM, Rijks, TGSM, Steeneken, PG, den Toonder, J, Ulenaers, M, den Dekker, A, Lok, P, Pulsford, N, van Straten, F, van Teeffelen, L, de Coster, J & Puers, R 2003, 'High-Q integrated RF passives and micro-mechanical capacitors on silicon', Paper presented at 2003 BIPOLAR/BICMOS Circuits and Technology Meeting, Toulouse, France, 28/09/03 - 30/09/03 pp. 147-150.

TY - CONF

T1 - High-Q integrated RF passives and micro-mechanical capacitors on silicon

AU - van Beek, J.T.M.

AU - van Delden, M.H.W.M.

AU - van Dijken, A.

AU - van Eerd, P.

AU - van Grootel, M.

AU - Jansman, A.B.M.

AU - Kemmeren, A.L.A.M.

AU - Rijks, Th.G.S.M.

AU - Steeneken, P.G.

AU - den Toonder, J.

AU - Ulenaers, M.

AU - den Dekker, A.

AU - Lok, P.

AU - Pulsford, N.

AU - van Straten, F.

AU - van Teeffelen, L.

AU - de Coster, J.

AU - Puers, R.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - The PASSI™ technology platform is described for the integration of low-loss inductors, capacitors, and MEMS on high-ohmic Si substrates. Using this platform the board space area taken up by e.g. impedance matching circuits can be reduced by 50%. The losses of passives induced by the semi-conducting Si substrate can effectively be suppressed using a combination of surface amorphisation and e-beam irradiation. The incorporation of MEM tuneable capacitors in high-Q inductor-capacitor networks is demonstrated.

AB - The PASSI™ technology platform is described for the integration of low-loss inductors, capacitors, and MEMS on high-ohmic Si substrates. Using this platform the board space area taken up by e.g. impedance matching circuits can be reduced by 50%. The losses of passives induced by the semi-conducting Si substrate can effectively be suppressed using a combination of surface amorphisation and e-beam irradiation. The incorporation of MEM tuneable capacitors in high-Q inductor-capacitor networks is demonstrated.

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M3 - Paper

AN - SCOPUS:1042300817

SP - 147

EP - 150

T2 - 2003 BIPOLAR/BICMOS Circuits and Technology Meeting

Y2 - 28 September 2003 through 30 September 2003

ER -

High-Q integrated RF passives and micro-mechanical capacitors on silicon

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