High-power quantum-dot superluminescent diodes with p-doped active region

M. Rossetti; L. Li; A. Fiore; L. Occhi; C. Velez; S. Mikhrin; A. Kovsh

doi:10.1109/LPT.2006.882303

High-power quantum-dot superluminescent diodes with p-doped active region

M. Rossetti
, L. Li
, A. Fiore
, L. Occhi
, C. Velez
, S. Mikhrin
, A. Kovsh

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

29 Citations (Scopus)

370 Downloads (Pure)

Abstract

We demonstrate the use of p-doping in the active region of quantum-dot superluminescent diodes. Modal gain measurements and light output-current characteristics prove that p-doping is beneficial for achieving higher gain, higher output power, and better temperature stability

Original language	English
Pages (from-to)	1946-1948
Journal	IEEE Photonics Technology Letters
Volume	18
Issue number	18
DOIs	https://doi.org/10.1109/LPT.2006.882303
Publication status	Published - 2006

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title = "High-power quantum-dot superluminescent diodes with p-doped active region",

abstract = "We demonstrate the use of p-doping in the active region of quantum-dot superluminescent diodes. Modal gain measurements and light output-current characteristics prove that p-doping is beneficial for achieving higher gain, higher output power, and better temperature stability",

author = "M. Rossetti and L. Li and A. Fiore and L. Occhi and C. Velez and S. Mikhrin and A. Kovsh",

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AU - Rossetti, M.

AU - Li, L.

AU - Fiore, A.

AU - Occhi, L.

AU - Velez, C.

AU - Mikhrin, S.

AU - Kovsh, A.

PY - 2006

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N2 - We demonstrate the use of p-doping in the active region of quantum-dot superluminescent diodes. Modal gain measurements and light output-current characteristics prove that p-doping is beneficial for achieving higher gain, higher output power, and better temperature stability

AB - We demonstrate the use of p-doping in the active region of quantum-dot superluminescent diodes. Modal gain measurements and light output-current characteristics prove that p-doping is beneficial for achieving higher gain, higher output power, and better temperature stability

U2 - 10.1109/LPT.2006.882303

DO - 10.1109/LPT.2006.882303

M3 - Article

SN - 1041-1135

VL - 18

SP - 1946

EP - 1948

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

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ER -

High-power quantum-dot superluminescent diodes with p-doped active region

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