High-power quantum-dot superluminescent diodes with p-doped active region

M. Rossetti, L. Li, A. Fiore, L. Occhi, C. Velez, S. Mikhrin, A. Kovsh

Research output: Contribution to journalArticleAcademicpeer-review

25 Citations (Scopus)
168 Downloads (Pure)

Abstract

We demonstrate the use of p-doping in the active region of quantum-dot superluminescent diodes. Modal gain measurements and light output-current characteristics prove that p-doping is beneficial for achieving higher gain, higher output power, and better temperature stability
Original languageEnglish
Pages (from-to)1946-1948
JournalIEEE Photonics Technology Letters
Volume18
Issue number18
DOIs
Publication statusPublished - 2006

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