High power CW output from low confinement asymmetric structure diode laser

G. Iordache, M. Buda, G.A. Acket, T.G. Roer, van de, L.M.F. Kaufmann, F. Karouta, C. Jagadish, H.H. Tan

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Abstract

High power continuous wave output from diode lasers using low loss, low confinement, asymmetric structures is demonstrated. An asymmetric structure with an optical trap layer was grown by metal organic vapour phase epitaxy. Gain guided 50 µm wide stripe 1-3 mm long diode lasers were studied. 1.8 W of continuous wave optical power per uncoated facet was obtained at an injection current of 4.7 A (36 mW/µm). The threshold current density is 270-400 A/cm2
Original languageEnglish
Pages (from-to)148-149
Number of pages2
JournalElectronics Letters
Volume35
Issue number2
DOIs
Publication statusPublished - 1999

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