High-performance solution-processed polymer ferroelectric field-effect transistors

Ronald C.G. Naber; Cristina Tanase; Paul W.M. Blom; Gerwin H. Gelinck; Albert W. Marsman; Fred J. Touwslager; Sepas Setayesh; Dago M. De Leeuw

doi:10.1038/nmat1329

High-performance solution-processed polymer ferroelectric field-effect transistors

Ronald C.G. Naber, Cristina Tanase, Paul W.M. Blom, Gerwin H. Gelinck, Albert W. Marsman, Fred J. Touwslager, Sepas Setayesh, Dago M. De Leeuw

Research output: Contribution to journal › Article › Academic › peer-review

873 Citations (Scopus)

Abstract

A rewritable, non-volatile ferroelectric field effect transistor (FeFET) memory device made with a ferroelectric fluoropolymer and a bisalkoxy- substituted poly(p-phenylene vinylene) semiconductor material is described. The ferroelectric semiconductor interfaces extends the attainable field effect bending in organic semiconductors. The organic FET are suited for low cost, low-performance logic circuit applications on flexible substrates. The polymer FeFET have a remanent on/off ratio of several orders of magnitude at zero gate bias, a long data retention time, a high programming cycle endurance, and a short programming time.

Original language	English
Pages (from-to)	243-248
Number of pages	6
Journal	Nature Materials
Volume	4
Issue number	3
DOIs	https://doi.org/10.1038/nmat1329
Publication status	Published - 1 Jan 2005
Externally published	Yes

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@article{c60d941164e545a197389ef1946a1e10,

title = "High-performance solution-processed polymer ferroelectric field-effect transistors",

abstract = "A rewritable, non-volatile ferroelectric field effect transistor (FeFET) memory device made with a ferroelectric fluoropolymer and a bisalkoxy- substituted poly(p-phenylene vinylene) semiconductor material is described. The ferroelectric semiconductor interfaces extends the attainable field effect bending in organic semiconductors. The organic FET are suited for low cost, low-performance logic circuit applications on flexible substrates. The polymer FeFET have a remanent on/off ratio of several orders of magnitude at zero gate bias, a long data retention time, a high programming cycle endurance, and a short programming time.",

author = "Naber, {Ronald C.G.} and Cristina Tanase and Blom, {Paul W.M.} and Gelinck, {Gerwin H.} and Marsman, {Albert W.} and Touwslager, {Fred J.} and Sepas Setayesh and {De Leeuw}, {Dago M.}",

year = "2005",

month = jan,

day = "1",

doi = "10.1038/nmat1329",

language = "English",

volume = "4",

pages = "243--248",

journal = "Nature Materials",

issn = "1476-1122",

publisher = "Nature Publishing Group",

number = "3",

}

TY - JOUR

T1 - High-performance solution-processed polymer ferroelectric field-effect transistors

AU - Naber, Ronald C.G.

AU - Tanase, Cristina

AU - Blom, Paul W.M.

AU - Gelinck, Gerwin H.

AU - Marsman, Albert W.

AU - Touwslager, Fred J.

AU - Setayesh, Sepas

AU - De Leeuw, Dago M.

PY - 2005/1/1

Y1 - 2005/1/1

N2 - A rewritable, non-volatile ferroelectric field effect transistor (FeFET) memory device made with a ferroelectric fluoropolymer and a bisalkoxy- substituted poly(p-phenylene vinylene) semiconductor material is described. The ferroelectric semiconductor interfaces extends the attainable field effect bending in organic semiconductors. The organic FET are suited for low cost, low-performance logic circuit applications on flexible substrates. The polymer FeFET have a remanent on/off ratio of several orders of magnitude at zero gate bias, a long data retention time, a high programming cycle endurance, and a short programming time.

AB - A rewritable, non-volatile ferroelectric field effect transistor (FeFET) memory device made with a ferroelectric fluoropolymer and a bisalkoxy- substituted poly(p-phenylene vinylene) semiconductor material is described. The ferroelectric semiconductor interfaces extends the attainable field effect bending in organic semiconductors. The organic FET are suited for low cost, low-performance logic circuit applications on flexible substrates. The polymer FeFET have a remanent on/off ratio of several orders of magnitude at zero gate bias, a long data retention time, a high programming cycle endurance, and a short programming time.

UR - http://www.scopus.com/inward/record.url?scp=14744284800&partnerID=8YFLogxK

U2 - 10.1038/nmat1329

DO - 10.1038/nmat1329

M3 - Article

AN - SCOPUS:14744284800

SN - 1476-1122

VL - 4

SP - 243

EP - 248

JO - Nature Materials

JF - Nature Materials

IS - 3

ER -

High-performance solution-processed polymer ferroelectric field-effect transistors

Abstract

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