High-performance solution-processed polymer ferroelectric field-effect transistors

Ronald C.G. Naber, Cristina Tanase, Paul W.M. Blom, Gerwin H. Gelinck, Albert W. Marsman, Fred J. Touwslager, Sepas Setayesh, Dago M. De Leeuw

Research output: Contribution to journalArticleAcademicpeer-review

857 Citations (Scopus)


A rewritable, non-volatile ferroelectric field effect transistor (FeFET) memory device made with a ferroelectric fluoropolymer and a bisalkoxy- substituted poly(p-phenylene vinylene) semiconductor material is described. The ferroelectric semiconductor interfaces extends the attainable field effect bending in organic semiconductors. The organic FET are suited for low cost, low-performance logic circuit applications on flexible substrates. The polymer FeFET have a remanent on/off ratio of several orders of magnitude at zero gate bias, a long data retention time, a high programming cycle endurance, and a short programming time.

Original languageEnglish
Pages (from-to)243-248
Number of pages6
JournalNature Materials
Issue number3
Publication statusPublished - 1 Jan 2005
Externally publishedYes


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