High performance polymer nanowire field-effect transistors with distinct molecular orientations

C. Xiao; G. Zhao; A. Zhang; W. Jiang; R. Janssen; W. Li; W. Hu; Z. Wang

doi:10.1002/adma.201502617

High performance polymer nanowire field-effect transistors with distinct molecular orientations

C. Xiao, G. Zhao, A. Zhang, W. Jiang, R. Janssen, W. Li, W. Hu, Z. Wang

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Polymer nanowires based on two diketopyrrolopyrrole conjugated polymers with similar chemical structures are shown to have distinct “edge-on” and “face-on” configurations in addition to high well-balanced hole and electron mobilities of 5.47 and 5.33 cm2 V–1 s–1 in field-effect transistors.

Original language	English
Pages (from-to)	4963-4968
Journal	Advanced Materials
Volume	27
Issue number	4
DOIs	https://doi.org/10.1002/adma.201502617
Publication status	Published - 28 Jul 2015

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title = "High performance polymer nanowire field-effect transistors with distinct molecular orientations",

abstract = "Polymer nanowires based on two diketopyrrolopyrrole conjugated polymers with similar chemical structures are shown to have distinct “edge-on” and “face-on” configurations in addition to high well-balanced hole and electron mobilities of 5.47 and 5.33 cm2 V–1 s–1 in field-effect transistors. ",

author = "C. Xiao and G. Zhao and A. Zhang and W. Jiang and R. Janssen and W. Li and W. Hu and Z. Wang",

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AU - Xiao, C.

AU - Zhao, G.

AU - Zhang, A.

AU - Jiang, W.

AU - Janssen, R.

AU - Li, W.

AU - Hu, W.

AU - Wang, Z.

PY - 2015/7/28

Y1 - 2015/7/28

N2 - Polymer nanowires based on two diketopyrrolopyrrole conjugated polymers with similar chemical structures are shown to have distinct “edge-on” and “face-on” configurations in addition to high well-balanced hole and electron mobilities of 5.47 and 5.33 cm2 V–1 s–1 in field-effect transistors.

AB - Polymer nanowires based on two diketopyrrolopyrrole conjugated polymers with similar chemical structures are shown to have distinct “edge-on” and “face-on” configurations in addition to high well-balanced hole and electron mobilities of 5.47 and 5.33 cm2 V–1 s–1 in field-effect transistors.

U2 - 10.1002/adma.201502617

DO - 10.1002/adma.201502617

M3 - Article

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SN - 0935-9648

VL - 27

SP - 4963

EP - 4968

JO - Advanced Materials

JF - Advanced Materials

IS - 4

ER -

High performance polymer nanowire field-effect transistors with distinct molecular orientations

Abstract

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