High performance low voltage organic field effect transistors on plastic substrate for amplifier circuits

G.J.R. Houin, F. Duez, L. Garcia, E. Cantatore, F. Torricelli, L. Hirsch, D. Belot, C. Pellet, M. Abbas

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)
5 Downloads (Pure)


The high performance air stable organic semiconductor small molecule dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) was chosen as active layer for field effect transistors built to realize flexible amplifier circuits. Initial device on rigid Si/SiO2 substrate showed appreciable performance with hysteresis-free characteristics. A number of approaches were applied to simplify the process, improve device performance and decrease the operating voltage: they include an oxide interfacial layer to decrease contact resistance; a polymer passivation layer to optimize semiconductor/dielectric interface and an anodized high-k oxide as dielectric layer for low voltage operation. The devices fabricated on plastic substrate yielded excellent electrical characteristics, showing mobility of 1.6 cm2/Vs, lack of hysteresis, operation below 5 V and on/off current ratio above 105. An OFET model based on variable ranging hopping theory was used to extract the relevant parameters from the transfer and output characteristics, which enabled us to simulate our devices achieving reasonable agreement with the measurements
Original languageEnglish
Title of host publicationOrganic Field-Effect Transistors XV, 28 August 2016, San Diego, California
Place of PublicationBellingham
Publication statusPublished - 23 Sept 2016
EventSPIE Organic Photonics+ Electronics, 2016 - San Diego, United States
Duration: 28 Aug 20161 Sept 2016

Publication series

NameProceedings of SPIE
ISSN (Print)0277-786X


ConferenceSPIE Organic Photonics+ Electronics, 2016
Country/TerritoryUnited States
CitySan Diego


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