High-performance deep submicron MOSTs with polycrystalline-(Si,Ge) gates

Y. V. Ponomarev, C. Salm, J. Schmitz, P. H. Woerlee, D. J. Gravesteijn

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

7 Citations (Scopus)

Abstract

High-performance poly-Si0.7Ge0.3 gate PMOST and NMOST, compatible with conventional CMOS processing, are manufactured for devices with Leff down to 0.15 μm. For PMOST we observe a approximately 20% increase in saturation current and improved subthreshold slope from 81 mV/dec to 75 mV/dec while off-state currents and short-channel effects are comparable to conventional devices. No influence of poly-Si0.7Ge0.3 on the performance of NMOS transistors gates is observed.

Original languageEnglish
Title of host publicationProceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages311-315
Number of pages5
ISBN (Print)0-7803-4131-7
DOIs
Publication statusPublished - 1 Jan 1997
Externally publishedYes
Event1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China
Duration: 3 Jun 19975 Jun 1997

Conference

Conference1997 International Symposium on VLSI Technology, Systems, and Applications
CityTaipei, China
Period3/06/975/06/97

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