High-Frequency Sheet Conductance of Nanolayered WS2Crystals for Two-Dimensional Nanodevices

Stan E.T. ter Huurne; Adonai Rodrigues Da Cruz; Niels van Hoof; Rasmus H. Godiksen; Sara A. Elrafei; Alberto G. Curto; Michael E. Flatté; Jaime Gómez Rivas

doi:10.1021/acsanm.2c03517

High-Frequency Sheet Conductance of Nanolayered WS₂Crystals for Two-Dimensional Nanodevices

Stan E.T. ter Huurne (Corresponding author)
, Adonai Rodrigues Da Cruz (Corresponding author)
, Niels van Hoof
, Rasmus H. Godiksen
, Sara A. Elrafei
, Alberto G. Curto
, Michael E. Flatté
, Jaime Gómez Rivas (Corresponding author)

Research output: Contribution to journal › Article › Academic › peer-review

2 Citations (Scopus)

105 Downloads (Pure)

Abstract

Time-resolved terahertz (THz) spectroscopy is a powerful technique for the determination of charge transport properties in photoexcited semiconductors. However, the relatively long wavelengths of THz radiation and the diffraction limit imposed by optical imaging systems reduce the applicability of THz spectroscopy to large samples with dimensions in the millimeter to centimeter range. Exploiting THz near-field spectroscopy, we present the first time-resolved THz measurements on a single exfoliated 2D nanolayered crystal of a transition metal dichalcogenide (WS₂). The high spatial resolution of THz near-field spectroscopy enables mapping of the sheet conductance for an increasing number of atomic layers. The single-crystalline structure of the nanolayered crystal allows for the direct observation of low-energy phonon modes, which are present in all thicknesses, coupling with free carriers. Density functional theory calculations show that the phonon mode corresponds to the breathing mode between atomic layers in the weakly bonded van der Waals layers, which can be strongly influenced by substrate-induced strain. The non-invasive and high-resolution mapping technique of carrier dynamics in nanolayered crystals by time-resolved THz time domain spectroscopy enables possibilities for the investigation of the relation between phonons and charge transport in nanoscale semiconductors for applications in two-dimensional nanodevices.

Original language	English
Pages (from-to)	15557-15562
Number of pages	6
Journal	ACS Applied Nano Materials
Volume	5
Issue number	10
DOIs	https://doi.org/10.1021/acsanm.2c03517
Publication status	Published - 28 Oct 2022

Funding

The authors thank Mohamed Abdelkhalik for performing the AFM measurements. S.T.H. and J.G.R. acknowledge the support from Nederlandse Organisatie voor Wetenschappelijk Onderzoek (NWO) (Vici 680-47-628), A.R.C. acknowledges the support from the ITN 4PHOTON Marie Sklodowska Curie grant agreement no. 721394, S.E. acknowledges the support from the NWO START-UP grant (740.018.009), and M.E.F. acknowledges the support for the theoretical methodology coherently connecting the optical excitation to phonons from the Center for Molecular Quantum Transduction (CMQT), an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under award no. DE-SC0021314 for funding.

Funders	Funder number
U.S. Department of Energy
European Union's Horizon 2020 - Research and Innovation Framework Programme	721394
Nederlandse Organisatie voor Wetenschappelijk Onderzoek	740.018.009, 680-47-628

Keywords

density functional theory
electron-phonon coupling
terahertz conductivity
terahertz near-field spectroscopy
transition metal dichalcogenide
tungsten disulfide

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10.1021/acsanm.2c03517

pdfFinal published version, 1.67 MBLicence: CC BY

Cite this

@article{48ec10fe989f4d0387c8998f01dac349,

title = "High-Frequency Sheet Conductance of Nanolayered WS2Crystals for Two-Dimensional Nanodevices",

abstract = "Time-resolved terahertz (THz) spectroscopy is a powerful technique for the determination of charge transport properties in photoexcited semiconductors. However, the relatively long wavelengths of THz radiation and the diffraction limit imposed by optical imaging systems reduce the applicability of THz spectroscopy to large samples with dimensions in the millimeter to centimeter range. Exploiting THz near-field spectroscopy, we present the first time-resolved THz measurements on a single exfoliated 2D nanolayered crystal of a transition metal dichalcogenide (WS2). The high spatial resolution of THz near-field spectroscopy enables mapping of the sheet conductance for an increasing number of atomic layers. The single-crystalline structure of the nanolayered crystal allows for the direct observation of low-energy phonon modes, which are present in all thicknesses, coupling with free carriers. Density functional theory calculations show that the phonon mode corresponds to the breathing mode between atomic layers in the weakly bonded van der Waals layers, which can be strongly influenced by substrate-induced strain. The non-invasive and high-resolution mapping technique of carrier dynamics in nanolayered crystals by time-resolved THz time domain spectroscopy enables possibilities for the investigation of the relation between phonons and charge transport in nanoscale semiconductors for applications in two-dimensional nanodevices.",

keywords = "density functional theory, electron-phonon coupling, terahertz conductivity, terahertz near-field spectroscopy, transition metal dichalcogenide, tungsten disulfide",

author = "\{ter Huurne\}, \{Stan E.T.\} and \{Rodrigues Da Cruz\}, Adonai and \{van Hoof\}, Niels and Godiksen, \{Rasmus H.\} and Elrafei, \{Sara A.\} and Curto, \{Alberto G.\} and Flatt{\'e}, \{Michael E.\} and \{G{\'o}mez Rivas\}, Jaime",

note = "Funding Information: The authors thank Mohamed Abdelkhalik for performing the AFM measurements. S.T.H. and J.G.R. acknowledge the support from Nederlandse Organisatie voor Wetenschappelijk Onderzoek (NWO) (Vici 680-47-628), A.R.C. acknowledges the support from the ITN 4PHOTON Marie Sklodowska Curie grant agreement no. 721394, S.E. acknowledges the support from the NWO START-UP grant (740.018.009), and M.E.F. acknowledges the support for the theoretical methodology coherently connecting the optical excitation to phonons from the Center for Molecular Quantum Transduction (CMQT), an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under award no. DE-SC0021314 for funding. Publisher Copyright: {\textcopyright} 2022 American Chemical Society. All rights reserved.",

year = "2022",

month = oct,

day = "28",

doi = "10.1021/acsanm.2c03517",

language = "English",

volume = "5",

pages = "15557--15562",

journal = "ACS Applied Nano Materials",

issn = "2574-0970",

publisher = "American Chemical Society",

number = "10",

}

High-Frequency Sheet Conductance of Nanolayered WS₂Crystals for Two-Dimensional Nanodevices. / ter Huurne, Stan E.T. (Corresponding author); Rodrigues Da Cruz, Adonai (Corresponding author); van Hoof, Niels et al.
In: ACS Applied Nano Materials, Vol. 5, No. 10, 28.10.2022, p. 15557-15562.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - High-Frequency Sheet Conductance of Nanolayered WS2Crystals for Two-Dimensional Nanodevices

AU - ter Huurne, Stan E.T.

AU - Rodrigues Da Cruz, Adonai

AU - van Hoof, Niels

AU - Godiksen, Rasmus H.

AU - Elrafei, Sara A.

AU - Curto, Alberto G.

AU - Flatté, Michael E.

AU - Gómez Rivas, Jaime

N1 - Funding Information: The authors thank Mohamed Abdelkhalik for performing the AFM measurements. S.T.H. and J.G.R. acknowledge the support from Nederlandse Organisatie voor Wetenschappelijk Onderzoek (NWO) (Vici 680-47-628), A.R.C. acknowledges the support from the ITN 4PHOTON Marie Sklodowska Curie grant agreement no. 721394, S.E. acknowledges the support from the NWO START-UP grant (740.018.009), and M.E.F. acknowledges the support for the theoretical methodology coherently connecting the optical excitation to phonons from the Center for Molecular Quantum Transduction (CMQT), an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under award no. DE-SC0021314 for funding. Publisher Copyright: © 2022 American Chemical Society. All rights reserved.

PY - 2022/10/28

Y1 - 2022/10/28

N2 - Time-resolved terahertz (THz) spectroscopy is a powerful technique for the determination of charge transport properties in photoexcited semiconductors. However, the relatively long wavelengths of THz radiation and the diffraction limit imposed by optical imaging systems reduce the applicability of THz spectroscopy to large samples with dimensions in the millimeter to centimeter range. Exploiting THz near-field spectroscopy, we present the first time-resolved THz measurements on a single exfoliated 2D nanolayered crystal of a transition metal dichalcogenide (WS2). The high spatial resolution of THz near-field spectroscopy enables mapping of the sheet conductance for an increasing number of atomic layers. The single-crystalline structure of the nanolayered crystal allows for the direct observation of low-energy phonon modes, which are present in all thicknesses, coupling with free carriers. Density functional theory calculations show that the phonon mode corresponds to the breathing mode between atomic layers in the weakly bonded van der Waals layers, which can be strongly influenced by substrate-induced strain. The non-invasive and high-resolution mapping technique of carrier dynamics in nanolayered crystals by time-resolved THz time domain spectroscopy enables possibilities for the investigation of the relation between phonons and charge transport in nanoscale semiconductors for applications in two-dimensional nanodevices.

AB - Time-resolved terahertz (THz) spectroscopy is a powerful technique for the determination of charge transport properties in photoexcited semiconductors. However, the relatively long wavelengths of THz radiation and the diffraction limit imposed by optical imaging systems reduce the applicability of THz spectroscopy to large samples with dimensions in the millimeter to centimeter range. Exploiting THz near-field spectroscopy, we present the first time-resolved THz measurements on a single exfoliated 2D nanolayered crystal of a transition metal dichalcogenide (WS2). The high spatial resolution of THz near-field spectroscopy enables mapping of the sheet conductance for an increasing number of atomic layers. The single-crystalline structure of the nanolayered crystal allows for the direct observation of low-energy phonon modes, which are present in all thicknesses, coupling with free carriers. Density functional theory calculations show that the phonon mode corresponds to the breathing mode between atomic layers in the weakly bonded van der Waals layers, which can be strongly influenced by substrate-induced strain. The non-invasive and high-resolution mapping technique of carrier dynamics in nanolayered crystals by time-resolved THz time domain spectroscopy enables possibilities for the investigation of the relation between phonons and charge transport in nanoscale semiconductors for applications in two-dimensional nanodevices.

KW - density functional theory

KW - electron-phonon coupling

KW - terahertz conductivity

KW - terahertz near-field spectroscopy

KW - transition metal dichalcogenide

KW - tungsten disulfide

UR - https://www.scopus.com/pages/publications/85140312612

U2 - 10.1021/acsanm.2c03517

DO - 10.1021/acsanm.2c03517

M3 - Article

C2 - 36338326

AN - SCOPUS:85140312612

SN - 2574-0970

VL - 5

SP - 15557

EP - 15562

JO - ACS Applied Nano Materials

JF - ACS Applied Nano Materials

IS - 10

ER -

High-Frequency Sheet Conductance of Nanolayered WS₂Crystals for Two-Dimensional Nanodevices

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Researchers from Eindhoven University of Technology Detail Findings in Nanodevices (High-frequency Sheet Conductance of Nanolayered Ws2 Crystals for Two-dimensional Nanodevices)

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High-Frequency Sheet Conductance of Nanolayered WS2Crystals for Two-Dimensional Nanodevices

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Researchers from Eindhoven University of Technology Detail Findings in Nanodevices (High-frequency Sheet Conductance of Nanolayered Ws2 Crystals for Two-dimensional Nanodevices)

Cite this

High-Frequency Sheet Conductance of Nanolayered WS₂Crystals for Two-Dimensional Nanodevices