High-frequency photocathode based on CNT-yarn emitter and GaAs photoswitch

O. Yilmazoglu; S. Al-Daffaie; F. Küppers; Y. Neo; H. Mimura

doi:10.1109/IVNC.2018.8520134

High-frequency photocathode based on CNT-yarn emitter and GaAs photoswitch

O. Yilmazoglu, S. Al-Daffaie, F. Küppers, Y. Neo, H. Mimura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

A high frequency photocathode based on a carbon nanotube (CNT)-yarn in series to a semi-insulating (s.i.) GaAs was fabricated and used for field electron emission in a diode configuration. This hybrid two-chip technology allows the separate optimization of the yarn emitter and the photoswitch. This concept can overcome the capacitance limitations of miniaturized high-frequency vacuum tubes. The used CNT yarn emitter with 20 μm diameter had a threshold electric fields of ∼1.8 V/μm( defined at 1mA/cm²) with a stable field emitter current up to 400 μA. The high-voltage photomodulation was up to 100 MHz.

Original language	English
Title of host publication	2018 31st International Vacuum Nanoelectronics Conference (IVNC)
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	2
ISBN (Electronic)	978-1-5386-5717-1
DOIs	https://doi.org/10.1109/IVNC.2018.8520134
Publication status	Published - 5 Nov 2018
Externally published	Yes
Event	31st International Vacuum Nanoelectronics Conference, IVNC 2018 - Kyoto, Japan Duration: 9 Jul 2018 → 13 Jul 2018

Conference

Conference	31st International Vacuum Nanoelectronics Conference, IVNC 2018
Country/Territory	Japan
City	Kyoto
Period	9/07/18 → 13/07/18

Keywords

Carbon nanotube
cNT yarn
photcathode
semiinsulating GaAs

Access to Document

10.1109/IVNC.2018.8520134

Cite this

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title = "High-frequency photocathode based on CNT-yarn emitter and GaAs photoswitch",

abstract = "A high frequency photocathode based on a carbon nanotube (CNT)-yarn in series to a semi-insulating (s.i.) GaAs was fabricated and used for field electron emission in a diode configuration. This hybrid two-chip technology allows the separate optimization of the yarn emitter and the photoswitch. This concept can overcome the capacitance limitations of miniaturized high-frequency vacuum tubes. The used CNT yarn emitter with 20 μm diameter had a threshold electric fields of ∼1.8 V/μm( defined at 1mA/cm2) with a stable field emitter current up to 400 μA. The high-voltage photomodulation was up to 100 MHz.",

keywords = "Carbon nanotube, cNT yarn, photcathode, semiinsulating GaAs",

author = "O. Yilmazoglu and S. Al-Daffaie and F. K{\"u}ppers and Y. Neo and H. Mimura",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 31st International Vacuum Nanoelectronics Conference, IVNC 2018 ; Conference date: 09-07-2018 Through 13-07-2018",

year = "2018",

month = nov,

day = "5",

doi = "10.1109/IVNC.2018.8520134",

language = "English",

booktitle = "2018 31st International Vacuum Nanoelectronics Conference (IVNC)",

publisher = "Institute of Electrical and Electronics Engineers",

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}

Yilmazoglu, O, Al-Daffaie, S, Küppers, F, Neo, Y & Mimura, H 2018, High-frequency photocathode based on CNT-yarn emitter and GaAs photoswitch. in 2018 31st International Vacuum Nanoelectronics Conference (IVNC)., 8520134, Institute of Electrical and Electronics Engineers, 31st International Vacuum Nanoelectronics Conference, IVNC 2018, Kyoto, Japan, 9/07/18. https://doi.org/10.1109/IVNC.2018.8520134

High-frequency photocathode based on CNT-yarn emitter and GaAs photoswitch. / Yilmazoglu, O.; Al-Daffaie, S.; Küppers, F. et al.
2018 31st International Vacuum Nanoelectronics Conference (IVNC). Institute of Electrical and Electronics Engineers, 2018. 8520134.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - High-frequency photocathode based on CNT-yarn emitter and GaAs photoswitch

AU - Yilmazoglu, O.

AU - Al-Daffaie, S.

AU - Küppers, F.

AU - Neo, Y.

AU - Mimura, H.

PY - 2018/11/5

Y1 - 2018/11/5

N2 - A high frequency photocathode based on a carbon nanotube (CNT)-yarn in series to a semi-insulating (s.i.) GaAs was fabricated and used for field electron emission in a diode configuration. This hybrid two-chip technology allows the separate optimization of the yarn emitter and the photoswitch. This concept can overcome the capacitance limitations of miniaturized high-frequency vacuum tubes. The used CNT yarn emitter with 20 μm diameter had a threshold electric fields of ∼1.8 V/μm( defined at 1mA/cm2) with a stable field emitter current up to 400 μA. The high-voltage photomodulation was up to 100 MHz.

AB - A high frequency photocathode based on a carbon nanotube (CNT)-yarn in series to a semi-insulating (s.i.) GaAs was fabricated and used for field electron emission in a diode configuration. This hybrid two-chip technology allows the separate optimization of the yarn emitter and the photoswitch. This concept can overcome the capacitance limitations of miniaturized high-frequency vacuum tubes. The used CNT yarn emitter with 20 μm diameter had a threshold electric fields of ∼1.8 V/μm( defined at 1mA/cm2) with a stable field emitter current up to 400 μA. The high-voltage photomodulation was up to 100 MHz.

KW - Carbon nanotube

KW - cNT yarn

KW - photcathode

KW - semiinsulating GaAs

UR - https://www.scopus.com/pages/publications/85057479147

U2 - 10.1109/IVNC.2018.8520134

DO - 10.1109/IVNC.2018.8520134

M3 - Conference contribution

AN - SCOPUS:85057479147

BT - 2018 31st International Vacuum Nanoelectronics Conference (IVNC)

PB - Institute of Electrical and Electronics Engineers

T2 - 31st International Vacuum Nanoelectronics Conference, IVNC 2018

Y2 - 9 July 2018 through 13 July 2018

ER -

High-frequency photocathode based on CNT-yarn emitter and GaAs photoswitch

Abstract

Conference

Keywords

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