High etch rate and smooth morphology using a novel chemistry in reactive ion etching of GaN

F. Karouta; B. Jacobs; P. Vreugdewater; N.G.H. Melick, van; O. Schön; H. Protzmann; M. Heuken

doi:10.1149/1.1390797

High etch rate and smooth morphology using a novel chemistry in reactive ion etching of GaN

F. Karouta, B. Jacobs, P. Vreugdewater, N.G.H. Melick, van, O. Schön, H. Protzmann, M. Heuken

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Abstract

no abstract

Original language	English
Pages (from-to)	240-241
Number of pages	2
Journal	Electrochemical and Solid-State Letters
Volume	2
Issue number	5
DOIs	https://doi.org/10.1149/1.1390797
Publication status	Published - 1999

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title = "High etch rate and smooth morphology using a novel chemistry in reactive ion etching of GaN",

abstract = "no abstract",

author = "F. Karouta and B. Jacobs and P. Vreugdewater and {Melick, van}, N.G.H. and O. Sch{\"o}n and H. Protzmann and M. Heuken",

year = "1999",

doi = "10.1149/1.1390797",

language = "English",

volume = "2",

pages = "240--241",

journal = "Electrochemical and Solid-State Letters",

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T1 - High etch rate and smooth morphology using a novel chemistry in reactive ion etching of GaN

AU - Karouta, F.

AU - Jacobs, B.

AU - Vreugdewater, P.

AU - Melick, van, N.G.H.

AU - Schön, O.

AU - Protzmann, H.

AU - Heuken, M.

PY - 1999

Y1 - 1999

N2 - no abstract

AB - no abstract

U2 - 10.1149/1.1390797

DO - 10.1149/1.1390797

M3 - Article

SN - 1099-0062

VL - 2

SP - 240

EP - 241

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 5

ER -

High etch rate and smooth morphology using a novel chemistry in reactive ion etching of GaN

Abstract

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