High electron mobility InN

R.E. Jones, S.X. Li, E.E. Haller, H.C.M. Genuchten, van, K.M. Yu, J.W. Ager, Z. Liliental-Weber, W. Walukiewicz, H. Lu, W.J. Schaff

Research output: Contribution to journalArticleAcademicpeer-review

30 Citations (Scopus)
193 Downloads (Pure)


Irradiation of InN films with 2 MeV He+ ions followed by thermal annealing below 500 °C creates films with high electron concentrations and mobilities, as well as strong photoluminescence. Calculations show that electron mobility in irradiated samples is limited by triply charged donor defects. Subsequent thermal annealing removes a fraction of the defects, decreasing the electron concentration. There is a large increase in electron mobility upon annealing; the mobilities approach those of the as-grown films, which have 10 to 100 times smaller electron concentrations. Spatial ordering of the triply charged defects is suggested to cause the unusual increase in electron mobility.
Original languageEnglish
Article number162103
Pages (from-to)162103-1/3
JournalApplied Physics Letters
Issue number16
Publication statusPublished - 2007


Dive into the research topics of 'High electron mobility InN'. Together they form a unique fingerprint.

Cite this