Abstract
A uni-traveling carrier photodetector (UTC-PD), heterogeneously integrated on silicon, is demonstrated. It is fabricated in an InP-based photonic membrane bonded on a silicon wafer, using a novel double-sided processing scheme. A very high 3 dB bandwidth of beyond 67 GHz is obtained, together with a responsivity of 0.7 A/W at 1.55 μm wavelength. In addition, open eye diagrams at 54 Gb/s are observed. These results promise high speed applications using a novel full-functionality photonic platform on silicon.
Original language | English |
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Pages (from-to) | 8290-8301 |
Journal | Optics Express |
Volume | 24 |
Issue number | 8 |
DOIs | |
Publication status | Published - 8 Apr 2016 |