High-bandwidth uni-traveling carrier waveguide photodetector on an InP-membrane-on-silicon platform

L. Shen; Y. Jiao; W. Yao; Z. Cao; J.P. van Engelen; G.C. Roelkens; M.K. Smit; J.J.G.M. van der Tol

doi:10.1364/OE.24.008290

High-bandwidth uni-traveling carrier waveguide photodetector on an InP-membrane-on-silicon platform

L. Shen, Y. Jiao, W. Yao, Z. Cao, J.P. van Engelen, G.C. Roelkens, M.K. Smit, J.J.G.M. van der Tol

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Abstract

A uni-traveling carrier photodetector (UTC-PD), heterogeneously integrated on silicon, is demonstrated. It is fabricated in an InP-based photonic membrane bonded on a silicon wafer, using a novel double-sided processing scheme. A very high 3 dB bandwidth of beyond 67 GHz is obtained, together with a responsivity of 0.7 A/W at 1.55 μm wavelength. In addition, open eye diagrams at 54 Gb/s are observed. These results promise high speed applications using a novel full-functionality photonic platform on silicon.

Original language	English
Pages (from-to)	8290-8301
Journal	Optics Express
Volume	24
Issue number	8
DOIs	https://doi.org/10.1364/OE.24.008290
Publication status	Published - 8 Apr 2016

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title = "High-bandwidth uni-traveling carrier waveguide photodetector on an InP-membrane-on-silicon platform",

abstract = "A uni-traveling carrier photodetector (UTC-PD), heterogeneously integrated on silicon, is demonstrated. It is fabricated in an InP-based photonic membrane bonded on a silicon wafer, using a novel double-sided processing scheme. A very high 3 dB bandwidth of beyond 67 GHz is obtained, together with a responsivity of 0.7 A/W at 1.55 μm wavelength. In addition, open eye diagrams at 54 Gb/s are observed. These results promise high speed applications using a novel full-functionality photonic platform on silicon.",

author = "L. Shen and Y. Jiao and W. Yao and Z. Cao and {van Engelen}, J.P. and G.C. Roelkens and M.K. Smit and {van der Tol}, J.J.G.M.",

year = "2016",

month = apr,

day = "8",

doi = "10.1364/OE.24.008290",

language = "English",

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T1 - High-bandwidth uni-traveling carrier waveguide photodetector on an InP-membrane-on-silicon platform

AU - Shen, L.

AU - Jiao, Y.

AU - Yao, W.

AU - Cao, Z.

AU - van Engelen, J.P.

AU - Roelkens, G.C.

AU - Smit, M.K.

AU - van der Tol, J.J.G.M.

PY - 2016/4/8

Y1 - 2016/4/8

N2 - A uni-traveling carrier photodetector (UTC-PD), heterogeneously integrated on silicon, is demonstrated. It is fabricated in an InP-based photonic membrane bonded on a silicon wafer, using a novel double-sided processing scheme. A very high 3 dB bandwidth of beyond 67 GHz is obtained, together with a responsivity of 0.7 A/W at 1.55 μm wavelength. In addition, open eye diagrams at 54 Gb/s are observed. These results promise high speed applications using a novel full-functionality photonic platform on silicon.

AB - A uni-traveling carrier photodetector (UTC-PD), heterogeneously integrated on silicon, is demonstrated. It is fabricated in an InP-based photonic membrane bonded on a silicon wafer, using a novel double-sided processing scheme. A very high 3 dB bandwidth of beyond 67 GHz is obtained, together with a responsivity of 0.7 A/W at 1.55 μm wavelength. In addition, open eye diagrams at 54 Gb/s are observed. These results promise high speed applications using a novel full-functionality photonic platform on silicon.

U2 - 10.1364/OE.24.008290

DO - 10.1364/OE.24.008290

M3 - Article

SN - 1094-4087

VL - 24

SP - 8290

EP - 8301

JO - Optics Express

JF - Optics Express

IS - 8

ER -

High-bandwidth uni-traveling carrier waveguide photodetector on an InP-membrane-on-silicon platform

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