High-bandwidth uni-traveling carrier waveguide photodetector on an InP-membrane-on-silicon platform

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Abstract

A uni-traveling carrier photodetector (UTC-PD), heterogeneously integrated on silicon, is demonstrated. It is fabricated in an InP-based photonic membrane bonded on a silicon wafer, using a novel double-sided processing scheme. A very high 3 dB bandwidth of beyond 67 GHz is obtained, together with a responsivity of 0.7 A/W at 1.55 μm wavelength. In addition, open eye diagrams at 54 Gb/s are observed. These results promise high speed applications using a novel full-functionality photonic platform on silicon.
Original languageEnglish
Pages (from-to)8290-8301
JournalOptics Express
Volume24
Issue number8
DOIs
Publication statusPublished - 8 Apr 2016

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