TY - JOUR
T1 - Hidden parameters in the plasma deposition of microcrystalline silicon solar cells
AU - van den Donker, M.N.
AU - Rech, B.
AU - Schmitz, R.
AU - Klomfass, J.
AU - Dingemans, G.
AU - Finger, F.
AU - Houben, L.
AU - Kessels, W.M.M.
AU - Sanden, van de, M.C.M.
PY - 2007
Y1 - 2007
N2 - The effect of process parameters on the plasma deposition of µc-Si:H solar cells is reviewed in this article. Several in situ diagnostics are presented, which can be used to study the process stability as an additional parameter in the deposition process. The diagnostics were used to investigate the stability of the substrate temperature during deposition at elevated power and the gas composition during deposition at decreased hydrogen dilution. Based on these investigations, an updated view on the role of the process parameters of plasma power, heater temperature, total gas flow rate, and hydrogen dilution is presented.
AB - The effect of process parameters on the plasma deposition of µc-Si:H solar cells is reviewed in this article. Several in situ diagnostics are presented, which can be used to study the process stability as an additional parameter in the deposition process. The diagnostics were used to investigate the stability of the substrate temperature during deposition at elevated power and the gas composition during deposition at decreased hydrogen dilution. Based on these investigations, an updated view on the role of the process parameters of plasma power, heater temperature, total gas flow rate, and hydrogen dilution is presented.
U2 - 10.1557/JMR.2007.0226
DO - 10.1557/JMR.2007.0226
M3 - Article
SN - 0884-2914
VL - 22
SP - 1767
EP - 1774
JO - Journal of Materials Research
JF - Journal of Materials Research
IS - 7
ER -