Heterogeneous integration of III-V optoelectronic devices on silicon

D. Thourhout, Van; G. Roelkens; J. Brouckaert; K. Komorowska; L. Liu; R.G.F. Baets; R. Nötzel

doi:10.1109/ICIPRM.2008.4703054

Heterogeneous integration of III-V optoelectronic devices on silicon

D. Thourhout, Van, G. Roelkens, J. Brouckaert, K. Komorowska, L. Liu, R.G.F. Baets, R. Nötzel

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

Silicon has been proven to be an excellent platform for photonics. However, active functionality and in particular light generation directly from silicon remains difficult. Therefore we developed a die-to-wafer bonding based approach for integrating III-V materials directly on silicon in a cost-effective way, which does not compromise the quality of the materials. In this paper we will illustrate the integration technology developed and several devices fabricated.

Original language	English
Title of host publication	Conference proceedings: International Conference on Indium Phosphide and Related Materials, IPRM 2008
Place of Publication	Versailles
Pages	4703054-1/2
DOIs	https://doi.org/10.1109/ICIPRM.2008.4703054
Publication status	Published - 2008
Event	20th International Conference on Indium Phosphide and Related Materials (IPRM 2008) - Versailles, France Duration: 25 May 2008 → 29 May 2008 Conference number: 20

Conference

Conference	20th International Conference on Indium Phosphide and Related Materials (IPRM 2008)
Abbreviated title	IPRM 2008
Country/Territory	France
City	Versailles
Period	25/05/08 → 29/05/08
Other	International Conference on Indium Phosphide and Related Materials, IPRM 2008

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10.1109/ICIPRM.2008.4703054

Cite this

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title = "Heterogeneous integration of III-V optoelectronic devices on silicon",

abstract = "Silicon has been proven to be an excellent platform for photonics. However, active functionality and in particular light generation directly from silicon remains difficult. Therefore we developed a die-to-wafer bonding based approach for integrating III-V materials directly on silicon in a cost-effective way, which does not compromise the quality of the materials. In this paper we will illustrate the integration technology developed and several devices fabricated.",

author = "{Thourhout, Van}, D. and G. Roelkens and J. Brouckaert and K. Komorowska and L. Liu and R.G.F. Baets and R. N{\"o}tzel",

year = "2008",

doi = "10.1109/ICIPRM.2008.4703054",

language = "English",

isbn = "9781424422593",

pages = "4703054--1/2",

booktitle = "Conference proceedings: International Conference on Indium Phosphide and Related Materials, IPRM 2008",

note = "20th International Conference on Indium Phosphide and Related Materials (IPRM 2008), IPRM 2008 ; Conference date: 25-05-2008 Through 29-05-2008",

}

Thourhout, Van, D, Roelkens, G, Brouckaert, J, Komorowska, K, Liu, L, Baets, RGF & Nötzel, R 2008, Heterogeneous integration of III-V optoelectronic devices on silicon. in Conference proceedings: International Conference on Indium Phosphide and Related Materials, IPRM 2008. Versailles, pp. 4703054-1/2, 20th International Conference on Indium Phosphide and Related Materials (IPRM 2008), Versailles, France, 25/05/08. https://doi.org/10.1109/ICIPRM.2008.4703054

Heterogeneous integration of III-V optoelectronic devices on silicon. / Thourhout, Van, D.; Roelkens, G.; Brouckaert, J. et al.

Conference proceedings: International Conference on Indium Phosphide and Related Materials, IPRM 2008. Versailles, 2008. p. 4703054-1/2.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Heterogeneous integration of III-V optoelectronic devices on silicon

AU - Thourhout, Van, D.

AU - Roelkens, G.

AU - Brouckaert, J.

AU - Komorowska, K.

AU - Liu, L.

AU - Baets, R.G.F.

AU - Nötzel, R.

N1 - Conference code: 20

PY - 2008

Y1 - 2008

N2 - Silicon has been proven to be an excellent platform for photonics. However, active functionality and in particular light generation directly from silicon remains difficult. Therefore we developed a die-to-wafer bonding based approach for integrating III-V materials directly on silicon in a cost-effective way, which does not compromise the quality of the materials. In this paper we will illustrate the integration technology developed and several devices fabricated.

AB - Silicon has been proven to be an excellent platform for photonics. However, active functionality and in particular light generation directly from silicon remains difficult. Therefore we developed a die-to-wafer bonding based approach for integrating III-V materials directly on silicon in a cost-effective way, which does not compromise the quality of the materials. In this paper we will illustrate the integration technology developed and several devices fabricated.

U2 - 10.1109/ICIPRM.2008.4703054

DO - 10.1109/ICIPRM.2008.4703054

M3 - Conference contribution

SN - 9781424422593

SP - 4703054-1/2

BT - Conference proceedings: International Conference on Indium Phosphide and Related Materials, IPRM 2008

CY - Versailles

T2 - 20th International Conference on Indium Phosphide and Related Materials (IPRM 2008)

Y2 - 25 May 2008 through 29 May 2008

ER -

Heterogeneous integration of III-V optoelectronic devices on silicon

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