Heterogeneous integration of III-V optoelectronic devices on silicon

D. Thourhout, Van, G. Roelkens, J. Brouckaert, K. Komorowska, L. Liu, R.G.F. Baets, R. Nötzel

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

Silicon has been proven to be an excellent platform for photonics. However, active functionality and in particular light generation directly from silicon remains difficult. Therefore we developed a die-to-wafer bonding based approach for integrating III-V materials directly on silicon in a cost-effective way, which does not compromise the quality of the materials. In this paper we will illustrate the integration technology developed and several devices fabricated.
Original languageEnglish
Title of host publicationConference proceedings: International Conference on Indium Phosphide and Related Materials, IPRM 2008
Place of PublicationVersailles
Pages4703054-1/2
DOIs
Publication statusPublished - 2008
Event20th International Conference on Indium Phosphide and Related Materials (IPRM 2008) - Versailles, France
Duration: 25 May 200829 May 2008
Conference number: 20

Conference

Conference20th International Conference on Indium Phosphide and Related Materials (IPRM 2008)
Abbreviated titleIPRM 2008
CountryFrance
CityVersailles
Period25/05/0829/05/08
OtherInternational Conference on Indium Phosphide and Related Materials, IPRM 2008

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