Abstract
Silicon has been proven to be an excellent platform for photonics. However, active functionality and in particular light generation directly from silicon remains difficult. Therefore we developed a die-to-wafer bonding based approach for integrating III-V materials directly on silicon in a cost-effective way, which does not compromise the quality of the materials. In this paper we will illustrate the integration technology developed and several devices fabricated.
Original language | English |
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Title of host publication | Conference proceedings: International Conference on Indium Phosphide and Related Materials, IPRM 2008 |
Place of Publication | Versailles |
Pages | 4703054-1/2 |
DOIs | |
Publication status | Published - 2008 |
Event | 20th International Conference on Indium Phosphide and Related Materials (IPRM 2008) - Versailles, France Duration: 25 May 2008 → 29 May 2008 Conference number: 20 |
Conference
Conference | 20th International Conference on Indium Phosphide and Related Materials (IPRM 2008) |
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Abbreviated title | IPRM 2008 |
Country/Territory | France |
City | Versailles |
Period | 25/05/08 → 29/05/08 |
Other | International Conference on Indium Phosphide and Related Materials, IPRM 2008 |