Hall-effect determination of the N-trap bound state in GaAs 1-xPx

L.J. van Ruyven; H.J.A. Bluyssen; R.W. van der Heijden; T.B. Tan; H.I. Ralph

doi:10.1063/1.89504

Hall-effect determination of the N-trap bound state in GaAs _1-xP_x

L.J. van Ruyven
, H.J.A. Bluyssen
, R.W. van der Heijden
, T.B. Tan
, H.I. Ralph

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

Hall-effect measurements as a function of temperature on nitrogen-containing GaAs_1-xP_x have shown that the nitrogen isoelectronic trap in these materials can be best described by a bound state in the band gap, occupied by electrons according to the equilibrium thermal distribution. It is shown that the presence of nitrogen can have a pronounced effect on the free-carrier density. Our results are in excellent agreement with recent optical data.

Original language	English
Pages (from-to)	685-687
Number of pages	3
Journal	Applied Physics Letters
Volume	31
Issue number	10
DOIs	https://doi.org/10.1063/1.89504
Publication status	Published - 1977
Externally published	Yes

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title = "Hall-effect determination of the N-trap bound state in GaAs 1-xPx",

abstract = "Hall-effect measurements as a function of temperature on nitrogen-containing GaAs1-xPx have shown that the nitrogen isoelectronic trap in these materials can be best described by a bound state in the band gap, occupied by electrons according to the equilibrium thermal distribution. It is shown that the presence of nitrogen can have a pronounced effect on the free-carrier density. Our results are in excellent agreement with recent optical data.",

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year = "1977",

doi = "10.1063/1.89504",

language = "English",

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pages = "685--687",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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AU - van Ruyven, L.J.

AU - Bluyssen, H.J.A.

AU - van der Heijden, R.W.

AU - Tan, T.B.

AU - Ralph, H.I.

PY - 1977

Y1 - 1977

N2 - Hall-effect measurements as a function of temperature on nitrogen-containing GaAs1-xPx have shown that the nitrogen isoelectronic trap in these materials can be best described by a bound state in the band gap, occupied by electrons according to the equilibrium thermal distribution. It is shown that the presence of nitrogen can have a pronounced effect on the free-carrier density. Our results are in excellent agreement with recent optical data.

AB - Hall-effect measurements as a function of temperature on nitrogen-containing GaAs1-xPx have shown that the nitrogen isoelectronic trap in these materials can be best described by a bound state in the band gap, occupied by electrons according to the equilibrium thermal distribution. It is shown that the presence of nitrogen can have a pronounced effect on the free-carrier density. Our results are in excellent agreement with recent optical data.

UR - https://www.scopus.com/pages/publications/36749119701

U2 - 10.1063/1.89504

DO - 10.1063/1.89504

M3 - Article

AN - SCOPUS:36749119701

SN - 0003-6951

VL - 31

SP - 685

EP - 687

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Hall-effect determination of the N-trap bound state in GaAs _1-xP_x

Abstract

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