Hall-effect measurements as a function of temperature on nitrogen-containing GaAs1-xPx have shown that the nitrogen isoelectronic trap in these materials can be best described by a bound state in the band gap, occupied by electrons according to the equilibrium thermal distribution. It is shown that the presence of nitrogen can have a pronounced effect on the free-carrier density. Our results are in excellent agreement with recent optical data.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 1977|