Hall-effect determination of the N-trap bound state in GaAs 1-xPx

L.J. van Ruyven, H.J.A. Bluyssen, R.W. van der Heijden, T.B. Tan, H.I. Ralph

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

Hall-effect measurements as a function of temperature on nitrogen-containing GaAs1-xPx have shown that the nitrogen isoelectronic trap in these materials can be best described by a bound state in the band gap, occupied by electrons according to the equilibrium thermal distribution. It is shown that the presence of nitrogen can have a pronounced effect on the free-carrier density. Our results are in excellent agreement with recent optical data.

Original languageEnglish
Pages (from-to)685-687
Number of pages3
JournalApplied Physics Letters
Volume31
Issue number10
DOIs
Publication statusPublished - 1977
Externally publishedYes

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