Growth of high quality of Ga-Polar GaN layers on GaN substrates after novel reactive ion etching

J.L. Weyher, A.R.A. Zauner, P.D. Brown, F. Karouta, A. Barcz, M. Wojdak, S. Porowski

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	3rd International Conference on Nitride Semiconductors
Pages	139-
Publication status	Published - 1999
Event	3rd International Conference on Nitride Semiconductors, 1999 - Montpellier, France Duration: 5 Jul 1999 → 9 Jul 1999

Conference	3rd International Conference on Nitride Semiconductors, 1999
Country/Territory	France
City	Montpellier
Period	5/07/99 → 9/07/99
Other	3rd International Conference on Nitride Semiconductors, Montpellier, France, 5-9 July

Cite this

@inproceedings{2ff4f43f276b43088fa5ebdd34bbf8ee,

title = "Growth of high quality of Ga-Polar GaN layers on GaN substrates after novel reactive ion etching",

author = "J.L. Weyher and A.R.A. Zauner and P.D. Brown and F. Karouta and A. Barcz and M. Wojdak and S. Porowski",

year = "1999",

language = "English",

pages = "139--",

booktitle = "3rd International Conference on Nitride Semiconductors",

note = "3rd International Conference on Nitride Semiconductors, 1999 ; Conference date: 05-07-1999 Through 09-07-1999",

}

TY - GEN

T1 - Growth of high quality of Ga-Polar GaN layers on GaN substrates after novel reactive ion etching

AU - Weyher, J.L.

AU - Zauner, A.R.A.

AU - Brown, P.D.

AU - Karouta, F.

AU - Barcz, A.

AU - Wojdak, M.

AU - Porowski, S.

PY - 1999

Y1 - 1999

M3 - Conference contribution

SP - 139-

BT - 3rd International Conference on Nitride Semiconductors

T2 - 3rd International Conference on Nitride Semiconductors, 1999

Y2 - 5 July 1999 through 9 July 1999

ER -