Growth of high quality of Ga-Polar GaN layers on GaN substrates after novel reactive ion etching

J.L. Weyher, A.R.A. Zauner, P.D. Brown, F. Karouta, A. Barcz, M. Wojdak, S. Porowski

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Original languageEnglish
Title of host publication3rd International Conference on Nitride Semiconductors
Pages139-
Publication statusPublished - 1999
Event3rd International Conference on Nitride Semiconductors, 1999 - Montpellier, France
Duration: 5 Jul 19999 Jul 1999

Conference

Conference3rd International Conference on Nitride Semiconductors, 1999
CountryFrance
CityMontpellier
Period5/07/999/07/99
Other3rd International Conference on Nitride Semiconductors, Montpellier, France, 5-9 July

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