Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2

A. Satta Alessandra, J. Schuhmacher, C. M. Whelan, W. Vandervorst, S. H. Brongersma, G. P. Beyer, K. Maex, A. Vantomme, M. M. Viitanen, H. H. Brongersma, W. F.A. Besling

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Abstract

The growth mechanism and continuity of atomic layer deposited (ALD) TiN formed by sequentially controlled reaction of TiCl4 and NH3 on thermal SiO2 were studied. The extent of the transient region and the rapid closure of the film was affected by growth at different temperatures (350 °C and 400 °C). It was found that a three-dimensional growth of islands characterized the ALD TiN growth on SiO2.

Original languageEnglish
Pages (from-to)7641-7646
Number of pages6
JournalJournal of Applied Physics
Volume92
Issue number12
DOIs
Publication statusPublished - 15 Dec 2002

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Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.

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