Growth and optical properties of direct band gap Ge/Ge0.87SN0.13 Core/Shell nanowire arrays

S. Assali, A. Dijkstra, A. Li, S. Kölling, M.A. Verheijen, L. Gagliano, N. von den Driesch, D. Buca, P.M. Koenraad, J.E.M. Haverkort, E.P.A.M. Bakkers

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Abstract

Group IV semiconductor optoelectronic devices are now possible by using strain-free direct band gap GeSn alloys
grown on a Ge/Si virtual substrate with Sn contents above 9%. Here, we demonstrate the growth of Ge/GeSn core/shell
nanowire arrays with Sn incorporation up to 13% and without the formation of Sn clusters. The nanowire geometry promotes
strain relaxation in the Ge0.87Sn0.13 shell and limits the formation of structural defects. This results in room-temperature photoluminescence centered at 0.465 eV and enhanced absorption above 98%. Therefore, direct band gap GeSn grown in a nanowire geometry holds promise as a low-cost and high-efficiency material for photodetectors operating in the short-wave infrared and thermal imaging devices
Original languageEnglish
Pages (from-to)1538-1544
Number of pages7
JournalNano Letters
Volume17
Issue number3
DOIs
Publication statusPublished - Mar 2017

Keywords

  • Semiconductor nanowire
  • absorption
  • direct band gap
  • germanium tin
  • photoluminescence

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