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Abstract
Group IV semiconductor optoelectronic devices are now possible by using strain-free direct band gap GeSn alloys
grown on a Ge/Si virtual substrate with Sn contents above 9%. Here, we demonstrate the growth of Ge/GeSn core/shell
nanowire arrays with Sn incorporation up to 13% and without the formation of Sn clusters. The nanowire geometry promotes
strain relaxation in the Ge0.87Sn0.13 shell and limits the formation of structural defects. This results in room-temperature photoluminescence centered at 0.465 eV and enhanced absorption above 98%. Therefore, direct band gap GeSn grown in a nanowire geometry holds promise as a low-cost and high-efficiency material for photodetectors operating in the short-wave infrared and thermal imaging devices
grown on a Ge/Si virtual substrate with Sn contents above 9%. Here, we demonstrate the growth of Ge/GeSn core/shell
nanowire arrays with Sn incorporation up to 13% and without the formation of Sn clusters. The nanowire geometry promotes
strain relaxation in the Ge0.87Sn0.13 shell and limits the formation of structural defects. This results in room-temperature photoluminescence centered at 0.465 eV and enhanced absorption above 98%. Therefore, direct band gap GeSn grown in a nanowire geometry holds promise as a low-cost and high-efficiency material for photodetectors operating in the short-wave infrared and thermal imaging devices
Original language | English |
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Pages (from-to) | 1538-1544 |
Number of pages | 7 |
Journal | Nano Letters |
Volume | 17 |
Issue number | 3 |
DOIs | |
Publication status | Published - Mar 2017 |
Keywords
- Semiconductor nanowire
- absorption
- direct band gap
- germanium tin
- photoluminescence
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Dive into the research topics of 'Growth and optical properties of direct band gap Ge/Ge0.87SN0.13 Core/Shell nanowire arrays'. Together they form a unique fingerprint.Projects
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Zwaartekracht PSN Research Centre for Integrated Nanophotonics
Koenraad, P. M., Smit, M., van Veldhoven, P. J., Pagliano, F., Fiore, A., Petruzzella, M., Curto, A. G., Picelli, L., Tjeertes, D., Banfi, E., van Elst, D. M. J., Verstijnen, T. J. F., Gajjela, R., Perez Sosa, M., Liang, M., Castellanos Gonzalez, G., Castellanos Gonzalez, G., Al-Daffaie, S., Pagliano, F. & Godiksen, R. H.
1/01/14 → 31/12/24
Project: Research direct