Growth and optical properties of direct band gap Ge/Ge0.87SN0.13 Core/Shell nanowire arrays

S. Assali; A. Dijkstra; A. Li; S. Kölling; M.A. Verheijen; L. Gagliano; N. von den Driesch; D. Buca; P.M. Koenraad; J.E.M. Haverkort; E.P.A.M. Bakkers

doi:10.1021/acs.nanolett.6b04627

Growth and optical properties of direct band gap Ge/Ge0.87SN0.13 Core/Shell nanowire arrays

S. Assali, A. Dijkstra, A. Li, S. Kölling, M.A. Verheijen, L. Gagliano, N. von den Driesch, D. Buca, P.M. Koenraad, J.E.M. Haverkort, E.P.A.M. Bakkers

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Abstract

Group IV semiconductor optoelectronic devices are now possible by using strain-free direct band gap GeSn alloys
grown on a Ge/Si virtual substrate with Sn contents above 9%. Here, we demonstrate the growth of Ge/GeSn core/shell
nanowire arrays with Sn incorporation up to 13% and without the formation of Sn clusters. The nanowire geometry promotes
strain relaxation in the Ge0.87Sn0.13 shell and limits the formation of structural defects. This results in room-temperature photoluminescence centered at 0.465 eV and enhanced absorption above 98%. Therefore, direct band gap GeSn grown in a nanowire geometry holds promise as a low-cost and high-efficiency material for photodetectors operating in the short-wave infrared and thermal imaging devices

Original language	English
Pages (from-to)	1538-1544
Number of pages	7
Journal	Nano Letters
Volume	17
Issue number	3
DOIs	https://doi.org/10.1021/acs.nanolett.6b04627
Publication status	Published - Mar 2017

Keywords

Semiconductor nanowire
absorption
direct band gap
germanium tin
photoluminescence

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10.1021/acs.nanolett.6b04627

Publishers versionFinal published version, 8.47 MBLicence: TAVERNE

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@article{ee3542f63a5442b1a0b1ceba1829d6cb,

title = "Growth and optical properties of direct band gap Ge/Ge0.87SN0.13 Core/Shell nanowire arrays",

abstract = "Group IV semiconductor optoelectronic devices are now possible by using strain-free direct band gap GeSn alloysgrown on a Ge/Si virtual substrate with Sn contents above 9%. Here, we demonstrate the growth of Ge/GeSn core/shellnanowire arrays with Sn incorporation up to 13% and without the formation of Sn clusters. The nanowire geometry promotesstrain relaxation in the Ge0.87Sn0.13 shell and limits the formation of structural defects. This results in room-temperature photoluminescence centered at 0.465 eV and enhanced absorption above 98%. Therefore, direct band gap GeSn grown in a nanowire geometry holds promise as a low-cost and high-efficiency material for photodetectors operating in the short-wave infrared and thermal imaging devices",

keywords = "Semiconductor nanowire, absorption, direct band gap, germanium tin, photoluminescence",

author = "S. Assali and A. Dijkstra and A. Li and S. K{\"o}lling and M.A. Verheijen and L. Gagliano and {von den Driesch}, N. and D. Buca and P.M. Koenraad and J.E.M. Haverkort and E.P.A.M. Bakkers",

year = "2017",

month = mar,

doi = "10.1021/acs.nanolett.6b04627",

language = "English",

volume = "17",

pages = "1538--1544",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "3",

}

TY - JOUR

T1 - Growth and optical properties of direct band gap Ge/Ge0.87SN0.13 Core/Shell nanowire arrays

AU - Assali, S.

AU - Dijkstra, A.

AU - Li, A.

AU - Kölling, S.

AU - Verheijen, M.A.

AU - Gagliano, L.

AU - von den Driesch, N.

AU - Buca, D.

AU - Koenraad, P.M.

AU - Haverkort, J.E.M.

AU - Bakkers, E.P.A.M.

PY - 2017/3

Y1 - 2017/3

N2 - Group IV semiconductor optoelectronic devices are now possible by using strain-free direct band gap GeSn alloysgrown on a Ge/Si virtual substrate with Sn contents above 9%. Here, we demonstrate the growth of Ge/GeSn core/shellnanowire arrays with Sn incorporation up to 13% and without the formation of Sn clusters. The nanowire geometry promotesstrain relaxation in the Ge0.87Sn0.13 shell and limits the formation of structural defects. This results in room-temperature photoluminescence centered at 0.465 eV and enhanced absorption above 98%. Therefore, direct band gap GeSn grown in a nanowire geometry holds promise as a low-cost and high-efficiency material for photodetectors operating in the short-wave infrared and thermal imaging devices

AB - Group IV semiconductor optoelectronic devices are now possible by using strain-free direct band gap GeSn alloysgrown on a Ge/Si virtual substrate with Sn contents above 9%. Here, we demonstrate the growth of Ge/GeSn core/shellnanowire arrays with Sn incorporation up to 13% and without the formation of Sn clusters. The nanowire geometry promotesstrain relaxation in the Ge0.87Sn0.13 shell and limits the formation of structural defects. This results in room-temperature photoluminescence centered at 0.465 eV and enhanced absorption above 98%. Therefore, direct band gap GeSn grown in a nanowire geometry holds promise as a low-cost and high-efficiency material for photodetectors operating in the short-wave infrared and thermal imaging devices

KW - Semiconductor nanowire

KW - absorption

KW - direct band gap

KW - germanium tin

KW - photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=85014911103&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.6b04627

DO - 10.1021/acs.nanolett.6b04627

M3 - Article

C2 - 28165747

SN - 1530-6984

VL - 17

SP - 1538

EP - 1544

JO - Nano Letters

JF - Nano Letters

IS - 3

ER -

Growth and optical properties of direct band gap Ge/Ge0.87SN0.13 Core/Shell nanowire arrays

Abstract

Keywords

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Zwaartekracht PSN Research Centre for Integrated Nanophotonics

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Growth and optical properties of direct band gap Ge/Ge0.87SN0.13 Core/Shell nanowire arrays

Abstract

Keywords

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