Growth and optical properties of axial hybrid III-V/silicon nanowires

M. Hocevar, W.G.G. Immink, M.A. Verheijen, N. Akopian, V. Zwiller, L.P. Kouwenhoven, E.P.A.M. Bakkers

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99 Citations (Scopus)
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Hybrid silicon nanowires with an integrated light-emitting segment can significantly advance nanoelectronics and nanophotonics. They would combine transport and optical characteristics in a nanoscale device, which can operate in the fundamental single-electron and single-photon regime. III-V materials, such as direct bandgap gallium arsenide, are excellent candidates for such optical segments. However, interfacing them with silicon during crystal growth is a major challenge, because of the lattice mismatch, different expansion coefficients and the formation of antiphase boundaries. Here we demonstrate a silicon nanowire with an integrated gallium-arsenide segment. We precisely control the catalyst composition and surface chemistry to obtain dislocation-free interfaces. The integration of gallium arsenide of high optical quality with silicon is enabled by short gallium phosphide buffers. We anticipate that such hybrid silicon/III-V nanowires open practical routes for quantum information devices, where for instance electronic and photonic quantum bits are manipulated in a III-V segment and stored in a silicon section
Original languageEnglish
Article number1266
Pages (from-to)1266-1/6
JournalNature Communications
Publication statusPublished - 2012


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