Grain-boundary-limited transport in semiconducting SnO2 thin films: Model and experiments

M.W.J. Prins, K.-O. Grosse-Holz, J.F.M. Cillessen, L.F. Feiner

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We present a model that describes grain-boundary-limited conduction in polycrystalline semiconductors, for thermally assisted ballistic as well as diffusive transport, both for degenerate and nondegenerate doping. In addition to bulk parameters (the carrier effective mass and mean free path) the model contains grain boundary parameters (barrier height and width) and a coefficient of current nonuniformity. Temperature-dependent conductivity and Hall measurements on polycrystalline SnO2 thin films with different Sb concentrations are consistently interpreted.
Original languageEnglish
Pages (from-to)888-893
JournalJournal of Applied Physics
Issue number2
Publication statusPublished - 1998


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