Good surface passivation of C-Si by high rate plasma deposited silicon oxide

B. Hoex; F.J.J. Peeters; M. Creatore; M.D. Bijker; W.M.M. Kessels; M.C.M. Sanden, van de

doi:10.1109/WCPEC.2006.279361

Good surface passivation of C-Si by high rate plasma deposited silicon oxide

B. Hoex
, F.J.J. Peeters
, M. Creatore
, M.D. Bijker
, W.M.M. Kessels
, M.C.M. Sanden, van de

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

Abstract

Silicon dioxide films were deposited by the (industrially applied) expanding thermal plasma technique using a gas mixture of argon-oxygen-octamethylcyclotetrasiloxane (OMCTS) and at deposition rates in the range of 5-23 nm/s. The films composition was investigated by means of spectroscopic ellipsometry, Fourier transform infrared spectroscopy and Rutherford backscattering. The composition was close to that of thermal oxide, with only a small residual hydrogen content of 2 at.%. The surface passivation of the silicon dioxide films was tested on 1.3Omegacm n-type FZ crystalline silicon wafers. A good level of surface passivation of 54 cm/s was reached after a 15 minute forming gas anneal at 600 degC

Original language	English
Title of host publication	Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006
Place of Publication	Piscataway, NJ, USA
Publisher	Institute of Electrical and Electronics Engineers
Pages	1134-1137
ISBN (Print)	1-424-40016-3
DOIs	https://doi.org/10.1109/WCPEC.2006.279361
Publication status	Published - 2006
Event	conference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12 - Duration: 1 Jan 2006 → …

Conference

Conference	conference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12
Period	1/01/06 → …
Other	WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12

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10.1109/WCPEC.2006.279361

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Hoex, B., Peeters, F. J. J., Creatore, M., Bijker, M. D., Kessels, W. M. M., & Sanden, van de, M. C. M. (2006). Good surface passivation of C-Si by high rate plasma deposited silicon oxide. In Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006 (pp. 1134-1137). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/WCPEC.2006.279361

Hoex, B. ; Peeters, F.J.J. ; Creatore, M. et al. / Good surface passivation of C-Si by high rate plasma deposited silicon oxide. Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006. Piscataway, NJ, USA : Institute of Electrical and Electronics Engineers, 2006. pp. 1134-1137

@inproceedings{081fb2d903af40939b0f1c3625e09f41,

title = "Good surface passivation of C-Si by high rate plasma deposited silicon oxide",

abstract = "Silicon dioxide films were deposited by the (industrially applied) expanding thermal plasma technique using a gas mixture of argon-oxygen-octamethylcyclotetrasiloxane (OMCTS) and at deposition rates in the range of 5-23 nm/s. The films composition was investigated by means of spectroscopic ellipsometry, Fourier transform infrared spectroscopy and Rutherford backscattering. The composition was close to that of thermal oxide, with only a small residual hydrogen content of 2 at.\%. The surface passivation of the silicon dioxide films was tested on 1.3Omegacm n-type FZ crystalline silicon wafers. A good level of surface passivation of 54 cm/s was reached after a 15 minute forming gas anneal at 600 degC",

author = "B. Hoex and F.J.J. Peeters and M. Creatore and M.D. Bijker and W.M.M. Kessels and \{Sanden, van de\}, M.C.M.",

year = "2006",

doi = "10.1109/WCPEC.2006.279361",

language = "English",

isbn = "1-424-40016-3",

pages = "1134--1137",

booktitle = "Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "conference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12 ; Conference date: 01-01-2006",

}

Hoex, B, Peeters, FJJ, Creatore, M, Bijker, MD, Kessels, WMM & Sanden, van de, MCM 2006, Good surface passivation of C-Si by high rate plasma deposited silicon oxide. in Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006. Institute of Electrical and Electronics Engineers, Piscataway, NJ, USA, pp. 1134-1137, conference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12, 1/01/06. https://doi.org/10.1109/WCPEC.2006.279361

Good surface passivation of C-Si by high rate plasma deposited silicon oxide. / Hoex, B.; Peeters, F.J.J.; Creatore, M. et al.
Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006. Piscataway, NJ, USA: Institute of Electrical and Electronics Engineers, 2006. p. 1134-1137.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Hoex, B.

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AU - Sanden, van de, M.C.M.

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N2 - Silicon dioxide films were deposited by the (industrially applied) expanding thermal plasma technique using a gas mixture of argon-oxygen-octamethylcyclotetrasiloxane (OMCTS) and at deposition rates in the range of 5-23 nm/s. The films composition was investigated by means of spectroscopic ellipsometry, Fourier transform infrared spectroscopy and Rutherford backscattering. The composition was close to that of thermal oxide, with only a small residual hydrogen content of 2 at.%. The surface passivation of the silicon dioxide films was tested on 1.3Omegacm n-type FZ crystalline silicon wafers. A good level of surface passivation of 54 cm/s was reached after a 15 minute forming gas anneal at 600 degC

AB - Silicon dioxide films were deposited by the (industrially applied) expanding thermal plasma technique using a gas mixture of argon-oxygen-octamethylcyclotetrasiloxane (OMCTS) and at deposition rates in the range of 5-23 nm/s. The films composition was investigated by means of spectroscopic ellipsometry, Fourier transform infrared spectroscopy and Rutherford backscattering. The composition was close to that of thermal oxide, with only a small residual hydrogen content of 2 at.%. The surface passivation of the silicon dioxide films was tested on 1.3Omegacm n-type FZ crystalline silicon wafers. A good level of surface passivation of 54 cm/s was reached after a 15 minute forming gas anneal at 600 degC

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DO - 10.1109/WCPEC.2006.279361

M3 - Conference contribution

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BT - Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006

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Hoex B, Peeters FJJ, Creatore M, Bijker MD, Kessels WMM , Sanden, van de MCM. Good surface passivation of C-Si by high rate plasma deposited silicon oxide. In Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006. Piscataway, NJ, USA: Institute of Electrical and Electronics Engineers. 2006. p. 1134-1137 doi: 10.1109/WCPEC.2006.279361

Good surface passivation of C-Si by high rate plasma deposited silicon oxide

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