Good surface passivation of C-Si by high rate plasma deposited silicon oxide

B. Hoex, F.J.J. Peeters, M. Creatore, M.D. Bijker, W.M.M. Kessels, M.C.M. Sanden, van de

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Abstract

Silicon dioxide films were deposited by the (industrially applied) expanding thermal plasma technique using a gas mixture of argon-oxygen-octamethylcyclotetrasiloxane (OMCTS) and at deposition rates in the range of 5-23 nm/s. The films composition was investigated by means of spectroscopic ellipsometry, Fourier transform infrared spectroscopy and Rutherford backscattering. The composition was close to that of thermal oxide, with only a small residual hydrogen content of 2 at.%. The surface passivation of the silicon dioxide films was tested on 1.3Omegacm n-type FZ crystalline silicon wafers. A good level of surface passivation of 54 cm/s was reached after a 15 minute forming gas anneal at 600 degC
Original languageEnglish
Title of host publicationConference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006
Place of PublicationPiscataway, NJ, USA
PublisherInstitute of Electrical and Electronics Engineers
Pages1134-1137
ISBN (Print)1-424-40016-3
DOIs
Publication statusPublished - 2006
Eventconference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12 -
Duration: 1 Jan 2006 → …

Conference

Conferenceconference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12
Period1/01/06 → …
OtherWCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12

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Cite this

Hoex, B., Peeters, F. J. J., Creatore, M., Bijker, M. D., Kessels, W. M. M., & Sanden, van de, M. C. M. (2006). Good surface passivation of C-Si by high rate plasma deposited silicon oxide. In Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006 (pp. 1134-1137). Piscataway, NJ, USA: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/WCPEC.2006.279361