Abstract
We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates. We demonstrate a precise positioning process for Ga-nucleated GaAs nanowires using a hole array in a dielectric layer thermally grown on silicon. Crystal quality is analyzed by high resolution transmission electron microscopy. Crystal structure evolves from pure zinc blende to pure wurtzite along a single nanowire, with a transition region.
Original language | English |
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Article number | 385602 |
Pages (from-to) | 385602-1/8 |
Number of pages | 8 |
Journal | Nanotechnology |
Volume | 21 |
Issue number | 38 |
DOIs | |
Publication status | Published - 2010 |