Gold-free growth of GaAs nanowires on silicon : arrays and polytypism

S.R. Plissard; K.A. Dick; G. Larrieu; S. Godey; A. Addad; X. Wallart; P. Caroff

doi:10.1088/0957-4484/21/38/385602

Gold-free growth of GaAs nanowires on silicon : arrays and polytypism

S.R. Plissard, K.A. Dick, G. Larrieu, S. Godey, A. Addad, X. Wallart, P. Caroff

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

131 Citations (Scopus)

Abstract

We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates. We demonstrate a precise positioning process for Ga-nucleated GaAs nanowires using a hole array in a dielectric layer thermally grown on silicon. Crystal quality is analyzed by high resolution transmission electron microscopy. Crystal structure evolves from pure zinc blende to pure wurtzite along a single nanowire, with a transition region.

Original language	English
Article number	385602
Pages (from-to)	385602-1/8
Number of pages	8
Journal	Nanotechnology
Volume	21
Issue number	38
DOIs	https://doi.org/10.1088/0957-4484/21/38/385602
Publication status	Published - 2010

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@article{6ef6d27480504420a3d9555f17294e5e,

title = "Gold-free growth of GaAs nanowires on silicon : arrays and polytypism",

abstract = "We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates. We demonstrate a precise positioning process for Ga-nucleated GaAs nanowires using a hole array in a dielectric layer thermally grown on silicon. Crystal quality is analyzed by high resolution transmission electron microscopy. Crystal structure evolves from pure zinc blende to pure wurtzite along a single nanowire, with a transition region.",

author = "S.R. Plissard and K.A. Dick and G. Larrieu and S. Godey and A. Addad and X. Wallart and P. Caroff",

year = "2010",

doi = "10.1088/0957-4484/21/38/385602",

language = "English",

volume = "21",

pages = "385602--1/8",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "Institute of Physics",

number = "38",

}

TY - JOUR

T1 - Gold-free growth of GaAs nanowires on silicon : arrays and polytypism

AU - Plissard, S.R.

AU - Dick, K.A.

AU - Larrieu, G.

AU - Godey, S.

AU - Addad, A.

AU - Wallart, X.

AU - Caroff, P.

PY - 2010

Y1 - 2010

N2 - We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates. We demonstrate a precise positioning process for Ga-nucleated GaAs nanowires using a hole array in a dielectric layer thermally grown on silicon. Crystal quality is analyzed by high resolution transmission electron microscopy. Crystal structure evolves from pure zinc blende to pure wurtzite along a single nanowire, with a transition region.

AB - We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates. We demonstrate a precise positioning process for Ga-nucleated GaAs nanowires using a hole array in a dielectric layer thermally grown on silicon. Crystal quality is analyzed by high resolution transmission electron microscopy. Crystal structure evolves from pure zinc blende to pure wurtzite along a single nanowire, with a transition region.

U2 - 10.1088/0957-4484/21/38/385602

DO - 10.1088/0957-4484/21/38/385602

M3 - Article

C2 - 20798467

VL - 21

SP - 385602-1/8

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 38

M1 - 385602

ER -