Gold-free growth of GaAs nanowires on silicon : arrays and polytypism

S.R. Plissard, K.A. Dick, G. Larrieu, S. Godey, A. Addad, X. Wallart, P. Caroff

Research output: Contribution to journalArticleAcademicpeer-review

149 Citations (Scopus)


We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates. We demonstrate a precise positioning process for Ga-nucleated GaAs nanowires using a hole array in a dielectric layer thermally grown on silicon. Crystal quality is analyzed by high resolution transmission electron microscopy. Crystal structure evolves from pure zinc blende to pure wurtzite along a single nanowire, with a transition region.
Original languageEnglish
Article number385602
Pages (from-to)385602-1/8
Number of pages8
Issue number38
Publication statusPublished - 2010


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