Giant anomalous Hall effect in Fe-based microwires grown by focused-electron-beam-induced doposition

R.M. Cordoba Castillo, R. Lavrijsen, A. Fernández-Pacheco, M.R. Ibarra, F.J. Schoenaker, T.H. Ellis, B. Barcones Campo, J.T. Kohlhepp, H.J.M. Swagten, B. Koopmans, J.J.L. Mulders, J.M. De Teresa

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Abstract

We report the temperature dependence of the resistivity, the anisotropic magnetoresistance and the Hall effect of iron microwires grown by focused-electron-beam-induced deposition. By modifying the growth conditions in a controllable way, we study wires with iron compositions varying from 45% to 70%, which present different electrical conduction mechanisms, with resistivity values differing over three orders of magnitude. The magnetoresistance depends highly on the composition, and it can be understood by a subtle interplay between the anisotropic magnetoresistance and intergrain magnetoresistance due to their complex microstructure, consisting of an iron–carbon–oxygen amorphous matrix. A giant value for the anomalous Hall effect is found, which we explain by a large contribution of the skew scattering mechanism. The present results emphasize the correlation between the exotic microstructure of the microwires, and their magnetotransport properties.
Original languageEnglish
Article number035001
Pages (from-to)035001-1/9
Number of pages9
JournalJournal of Physics D: Applied Physics
Volume45
Issue number3
DOIs
Publication statusPublished - 2012

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