Geometry and bias dependence of low-frequency random telegraph signal and 1/f noise levels in mosfets

M. Toita, L.K.J. Vandamme, S. Sugawa, A. Teramoto, T. Ohmi

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19 Citations (Scopus)
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Abstract

Low-frequency noise in MOSFETs is considered to originate from two distinctive sources: Random Telegraph Signal caused by carrier traps at the border of the SiO2/Si interface and 1/f fluctuation due to inherent nature of lattice scattering in a Si crystal. It is very important to distinguish these two mechanisms. Relative amplitude of RTS and 1/f noise depends on the number of carriers under the gate electrode, which makes it channel size as well as gate-bias dependent. In this paper, we discuss the dependence of the amplitudes of RTS and 1/f noise in MOSFETs on sample geometry and gate bias condition. We discuss low-frequency noise reduction by utilizing low electron-temperature plasma for gate oxidation as well.
Original languageEnglish
Pages (from-to)L539-L548
Number of pages10
JournalFluctuation and Noise Letters
Volume5
Issue number4
DOIs
Publication statusPublished - 2005

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